Used AMAT / APPLIED MATERIALS Centura 5200 Phase I #9133089 for sale

ID: 9133089
Poly etcher, 8" Wafer shape: JMF Chamber Type/ Location System Configuration BASE Position A Poly Main Etch Position B Poly Main Etch Position C Poly Main Etch Position F ORIENTER System Safety Equipment EMO Switch Type TURN TO RELEASE EMO ETI COMPLIANT EMO Guard Ring INCLUDED Smoke Detector At MF No Skin YES Smoke Detector At Gen Rack YES Smoke Detector At AC Rack YES Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Pallet B Gas Panel Pallet B Gas Line Requirement Pallet Pallet Gas Line Configuration Line 1 Gas MFC Size Line 2 Gas MFC Size Line 3 Gas MFC Size Line 4 Gas MFC Size Line 5 Gas MFC Size Line 6 Gas MFC Size Line 7 Gas MFC Size Line 8 Gas MFC Size Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Pallet C Gas Panel Pallet C Gas Line Requirement Pallet Pallet Gas Line Configuration Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Features Gas Panel Features Gas Panel Features Gas Panel Facilities Hook Up Gas Panel Exhaust Gas Panel Controller VME I Mainframe General Mainframe Options Facilities Type REGULATED Facilities Orientation MAINFRAME FACILITIES BACK CONNECTION Loadlock/Cassette Options Loadlock Type NBLL W/ AUTO-ROTATION Loadlock Cover Finish ANTI-STATIC PAINTED Loadlock Slit Valve Oring Type VITON Wafer Mapping STD Wafer Out of Cassette Sensor YES Cassette Present Sensor YES Transfer Chamber Options Transfer Ch Manual Lid Hoist YES Robot Type CENTURA HP ROBOT Wafer On Blade Detector BASIC Loadlock Vent BOTTOM VENT Front Panel Front Panel ANTI-STATIC PAINTED Signal Light Tower 4 COLOR SIGNAL LIGHT TOWER INCLUDING RED LIGHT 4 Color Signal Light Tower Configuration Top Light Color RED Second Light Color YELLOW Third Light Color GREEN Fourth Light Color BLUE Signal Light Tower Buzzer ENABLED Second Signal Light Tower YES Remote System Controller Controller Type 86 INCH COMMON CONTROLLER Cntrlr Electrical Interface BOTTOM FEED Controller Exhaust TOP EXHAUST Controller Cover Option YES System Monitors System Monitor 2 TTW / different cable lengths Monitor Cursor 2 BLINKING CURSOR AC Rack GFI 30mAMP AC Rack Types 84 INCH SLIM AC GEN RACK Exhaust Collar 84 INCH SLIM RACK EXHAUST COLLAR Umbilical Ctrlr to Mainframe Umbilical 25Ft HX Control Cable Length 50Ft Heat Exchanger Hose Length 65Ft Pump Cable Length 65Ft RF Generator Cable 65Ft Signal Light Tower Ext Cable Pump Interface Only Pump Interface Qty Interface Only.
AMAT / APPLIED MATERIALS Centura 5200 Phase I is a high-throughput chemical vapor deposition (CVD) reactor designed for use in semiconductor fabrication. The equipment consists of ten chambers for wafer processing, as well as various tool management capabilities. It is designed for low-temperature processing of silicon-based materials such as silicon nitride, silicon oxide, and silicon oxynitride. Using capacitively coupled plasma (CCP) technology, AMAT Centura 5200 Phase I provides highly uniform and precise deposition processes. It features an advanced digital chamber volume (DV) capability designed for precise control over the deposition rate of the wafer. The system can also be used in multiple process recipes due to its dual process controller design. APPLIED MATERIALS Centura 5200 Phase I offers a uniquely scalable processing architecture, allowing for increased deposition rates and higher throughput. This unit can process wafers up to 200 mm in diameter, with a maximum process temperature of up to 1200°C. Wafers can be pre-cleaned and pre-cooled in the machine, and post-cooled to prevent oxidation of the deposited material. Centura 5200 Phase I offers an advanced industry-standard safety feature, and is compliant with all government safety regulations. The tool is designed for minimal contact with the wafers, ensuring no subsequent contamination. For a clean room setting, the tool is equipped with an air-flow control package, as well as a pass-through buffer chamber for wafer handling. By providing a combination of features, the asset can optimize the CVD process to provide uniformity and uniform gain in thickness. This allows for the preservation of surface quality while providing the desired coverage and film thickness. The unmatched accuracy and precision of this model provides for one of the most advanced manufacturing solutions available.
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