Used AMAT / APPLIED MATERIALS Centura 5200 Phase I #9133089 for sale
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ID: 9133089
Poly etcher, 8"
Wafer shape: JMF
Chamber Type/ Location
System Configuration BASE
Position A Poly Main Etch
Position B Poly Main Etch
Position C Poly Main Etch
Position F ORIENTER
System Safety Equipment
EMO Switch Type TURN TO RELEASE EMO ETI COMPLIANT
EMO Guard Ring INCLUDED
Smoke Detector At MF No Skin YES
Smoke Detector At Gen Rack YES
Smoke Detector At AC Rack YES
Pallet Corrosive Gas Line Qty 3
Pallet Inert Gas Line Qty 5
Filter Qty 8
Gas Panel Pallet B Gas Panel Pallet B
Gas Line Requirement
Pallet Pallet
Gas Line Configuration
Line 1 Gas
MFC Size
Line 2 Gas
MFC Size
Line 3 Gas
MFC Size
Line 4 Gas
MFC Size
Line 5 Gas
MFC Size
Line 6 Gas
MFC Size
Line 7 Gas
MFC Size
Line 8 Gas
MFC Size
Pallet Corrosive Gas Line Qty 3
Pallet Inert Gas Line Qty 5
Filter Qty 8
Gas Panel Pallet C Gas Panel Pallet C
Gas Line Requirement
Pallet Pallet
Gas Line Configuration
Pallet Corrosive Gas Line Qty 3
Pallet Inert Gas Line Qty 5
Filter Qty 8
Gas Panel Features Gas Panel Features
Gas Panel Features
Gas Panel Facilities Hook Up
Gas Panel Exhaust
Gas Panel Controller VME I
Mainframe
General Mainframe Options
Facilities Type REGULATED
Facilities Orientation MAINFRAME FACILITIES BACK CONNECTION
Loadlock/Cassette Options
Loadlock Type NBLL W/ AUTO-ROTATION
Loadlock Cover Finish ANTI-STATIC PAINTED
Loadlock Slit Valve Oring Type VITON
Wafer Mapping STD
Wafer Out of Cassette Sensor YES
Cassette Present Sensor YES
Transfer Chamber Options
Transfer Ch Manual Lid Hoist YES
Robot Type CENTURA HP ROBOT
Wafer On Blade Detector BASIC
Loadlock Vent BOTTOM VENT
Front Panel
Front Panel ANTI-STATIC PAINTED
Signal Light Tower 4 COLOR SIGNAL LIGHT TOWER INCLUDING RED LIGHT
4 Color Signal Light Tower Configuration
Top Light Color RED
Second Light Color YELLOW
Third Light Color GREEN
Fourth Light Color BLUE
Signal Light Tower Buzzer ENABLED
Second Signal Light Tower YES
Remote
System Controller
Controller Type 86 INCH COMMON CONTROLLER
Cntrlr Electrical Interface BOTTOM FEED
Controller Exhaust TOP EXHAUST
Controller Cover Option YES
System Monitors
System Monitor 2 TTW / different cable lengths
Monitor Cursor 2 BLINKING CURSOR
AC Rack
GFI 30mAMP
AC Rack Types 84 INCH SLIM AC GEN RACK
Exhaust Collar 84 INCH SLIM RACK EXHAUST COLLAR
Umbilical
Ctrlr to Mainframe Umbilical 25Ft
HX Control Cable Length 50Ft
Heat Exchanger Hose Length 65Ft
Pump Cable Length 65Ft
RF Generator Cable 65Ft
Signal Light Tower Ext Cable
Pump Interface Only
Pump Interface Qty Interface Only.
AMAT / APPLIED MATERIALS Centura 5200 Phase I is a high-throughput chemical vapor deposition (CVD) reactor designed for use in semiconductor fabrication. The equipment consists of ten chambers for wafer processing, as well as various tool management capabilities. It is designed for low-temperature processing of silicon-based materials such as silicon nitride, silicon oxide, and silicon oxynitride. Using capacitively coupled plasma (CCP) technology, AMAT Centura 5200 Phase I provides highly uniform and precise deposition processes. It features an advanced digital chamber volume (DV) capability designed for precise control over the deposition rate of the wafer. The system can also be used in multiple process recipes due to its dual process controller design. APPLIED MATERIALS Centura 5200 Phase I offers a uniquely scalable processing architecture, allowing for increased deposition rates and higher throughput. This unit can process wafers up to 200 mm in diameter, with a maximum process temperature of up to 1200°C. Wafers can be pre-cleaned and pre-cooled in the machine, and post-cooled to prevent oxidation of the deposited material. Centura 5200 Phase I offers an advanced industry-standard safety feature, and is compliant with all government safety regulations. The tool is designed for minimal contact with the wafers, ensuring no subsequent contamination. For a clean room setting, the tool is equipped with an air-flow control package, as well as a pass-through buffer chamber for wafer handling. By providing a combination of features, the asset can optimize the CVD process to provide uniformity and uniform gain in thickness. This allows for the preservation of surface quality while providing the desired coverage and film thickness. The unmatched accuracy and precision of this model provides for one of the most advanced manufacturing solutions available.
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