Used AMAT / APPLIED MATERIALS Centura 5200 Phase I #9133092 for sale

Photo Used AMAT / APPLIED MATERIALS Centura 5200 Phase I For Sale
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Reactors
Manufacturer
AMAT / APPLIED MATERIALS
Model
Centura 5200 Phase I
ID: 9133092
Oxide etcher, 8" Wafer shape: JMF Chamber Type/ Location Selected Option System Configuration BASE Position A Oxide Main Etch Position B Oxide Main Etch Position C Oxide Main Etch Position F ORIENTER Position A Configuration Oxide Main Etch Position B Configuration Oxide Main Etch Position C Configuration Oxide Main Etch Position D Configuration System Safety Equipment Selected Option EMO Switch Type TURN TO RELEASE EMO ETI COMPLIANT EMO Guard Ring INCLUDED Smoke Detector At MF No Skin YES Smoke Detector At Gen Rack YES Smoke Detector At AC Rack YES Water and Smoke Detector ALARM System Labels ENGLISH CHA - CHA - OXIDE Chamber Options Selected Option Process Kit USED Turbo Pump Seikoseiki 301 Emission Endpoint Type Monocro Oxide ESC USED Flat BIAS RF GEN OEM-28B MxP Oxide Throttle Butter fly MxP Oxide Gate Valve VAT CHB - CHB - OXIDE Chamber Options Selected Option Process Kit USED Turbo Pump Seikoseiki 301 Emission Endpoint Type Monocro Oxide ESC USED Flat BIAS RF GEN OEM-28B MxP Oxide Throttle Butter fly MxP Oxide Gate Valve VAT CHC - CHC - OXIDE Chamber Options Selected Option Process Kit USED Turbo Pump Seikoseiki 301 Emission Endpoint Type Monocro Oxide ESC USED Flat BIAS RF GEN OEM-28B MxP Oxide Throttle Butter fly MxP Oxide Gate Valve VAT Gas Delivery Options Pallet Options Selected Option Valve Fujikin Regulator Fujikin Gas Panel Pallet A Gas Panel Pallet A Gas Line Requirement Selected Option Pallet Pallet Gas Line Configuration Selected Option Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Pallet B Gas Panel Pallet B Gas Line Requirement Selected Option Pallet Pallet Gas Line Configuration Selected Option Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Pallet C Gas Panel Pallet C Gas Line Requirement Selected Option Pallet Pallet Gas Line Configuration Selected Option Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Features Gas Panel Features Gas Panel Features Selected Option Gas Panel Controller VME I Mainframe General Mainframe Options Selected Option Facilities Type REGULATED Facilities Orientation MAINFRAME FACILITIES BACK CONNECTION Loadlock/Cassette Options Selected Option Loadlock Type NBLL W/ AUTO-ROTATION Loadlock Cover Finish ANTI-STATIC PAINTED Loadlock Slit Valve Oring Type VITON Wafer Mapping STD Wafer Out of Cassette Sensor YES Cassette Present Sensor YES Transfer Chamber Options Selected Option Transfer Ch Manual Lid Hoist YES Robot Type CENTURA HP ROBOT Wafer On Blade Detector BASIC Loadlock Vent BOTTOM VENT Front Panel Selected Option Front Panel ANTI-STATIC PAINTED Signal Light Tower 4 COLOR SIGNAL LIGHT TOWER INCLUDING RED LIGHT 4 Color Signal Light Tower Configuration Selected Option Top Light Color RED Second Light Color YELLOW Third Light Color GREEN Fourth Light Color BLUE Signal Light Tower Buzzer ENABLED Second Signal Light Tower YES Remote System Controller Selected Option Controller Type 86 INCH COMMON CONTROLLER Cntrlr Electrical Interface BOTTOM FEED Controller Exhaust TOP EXHAUST Controller Cover Option YES System Monitors Selected Option System Monitor 2 TTW / different cable lengths Monitor Cursor 2 BLINKING CURSOR AC Rack Selected Option GFI 30mAMP AC Rack Types 84 INCH SLIM AC GEN RACK Exhaust Collar 84 INCH SLIM RACK EXHAUST COLLAR Umbilical Selected Option Ctrlr to Mainframe Umbilical 25Ft HX Control Cable Length 50Ft Heat Exchanger Hose Length 65Ft Pump Cable Length 65Ft RF Generator Cable 65Ft Pump Interface Only Selected Option Pump Interface Qty Interface Only.
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AMAT / APPLIED MATERIALS Centura 5200 Phase I is a reactor designed for semiconductor fabrication. It has a SiH4/NH3/DOP end-point etch with a 56MHz RF source and is capable of etch depths down to 8.5 micron, with a phosphorus trichloride (PCl3) based etch module. The chamber is constructed from stainless steel and has a low temperature operation for better etchant/process compatibility. The reactor comes with a process control box and a separate airlock for loading and unloading of chambers. AMAT Centura 5200 Phase I features a large, internally-heated, gas-tight process chamber. This chamber is designed to prevent particles and etchant reagents from entering the wafer during etching. It can accommodate up to 2 in (5.08 cm) and 8000 lb (3.63 ton) of semiconductor wafers. The chamber has a vacuum equipment and an exhaust chimney with deflection baffles to ensure uniform etching and low backside contamination. The built-in end-point controller monitors the etching process by measuring the pressure inside the chamber, the state of the gas delivery system, and the current across the magnetron of the power supply. The process chamber also contains an automatic temperature compensation module (ATCM) for improved process consistency and performance. The ATCM has a range from 180° to 260°C and offers a wide range of process optimization adjustment. It also has flexible temperature control with user selectable parameters to optimize process parameters. The end-point etch process is designed to provide efficient and precise control of etch depths. APPLIED MATERIALS Centura 5200 Phase I features a self-tuning, 56 MHz RF power source with a full-waveform process control unit. This machine allows the operator to etch wafers with varying etch depths and also helps to prevent damage and scarring of wafers. Finally, Centura 5200 Phase I is designed to provide a safe, reliable and repeatable process with an excellent end-result. It has built-in safety features for alerting the operator in the event of potential faults. The tool also has built-in maintenance and trouble-shooting features for easy analysis and troubleshooting. Therefore, AMAT / APPLIED MATERIALS Centura 5200 Phase I is an ideal asset for efficient production of semiconductor wafers.
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