Used AMAT / APPLIED MATERIALS Centura 5200 #123066 for sale

ID: 123066
Wafer Size: 8"
PVD system, 8" Process capabilities: CVD/Anneal and PVD (3) Chambers Chamber 1: CVD with liquid delivery system (LDS) and vaporizer Chamber 2: PVD Chamber 3: MAC-Anneal Controller type: VME Reduced pressure: YES External cooling: water cooled Accessories: Degas chamber Orienter chamber (2) Heat exchangers MAC blower RF generator rack Halo 650 system controller rack Cryo compressor System cables (2) Monitors.
AMAT / APPLIED MATERIALS Centura 5200 (AMAT Centura 5200) is a metal-organic chemical vapor deposition (MOCVD) reactor designed for deposition of metal oxide compounds such as indium tin oxide (ITO). The reactor is designed to offer superior process latitude and uniformity resulting in improved process repeatability and reproducibility for high field-of-view (FOV) applications. APPLIED MATERIALS Centura 5200 employs two independent processing chambers. The chamber design consists of an Aluminum-Oxide upper chamber operated with a fully balanced hot-wall design. The lower chamber is operated with a cool-wall design and is constructed with quartz walls. Both chambers are infused with nitrous oxide (N2O) which circulates and improves the homogeneity of the process gas. The reactor features an advanced source configuration that supports the deposition of Indium Tin Oxide, as well as other metal-oxide compounds. The gas sources include Linde cryogenic sources, IBH and Novellus Gas Control Panel (GCP). All sources are equipped with preheat and needled valve systems that produce highly uniform deposits with excellent recipe consistency thanks to proprietary Montelli software. Centura 5200 also comes with dual viewports for non-destructive in-situ optical end point detection and gas control for precise control of all gaseous components in the reactor, as well as custom deposition parameters for specific materials and applications. The system is designed for high throughput, with a single tool capable of processing 2 wafers at the same time. Furthermore, AMAT / APPLIED MATERIALS Centura 5200 has a low-pressure low-temperature operation mode for improved deposition uniformity. The reactor also has a high-temperature post-anneal capability, which provides precise control over film microstructure and thickness. Overall, AMAT Centura 5200 is an advanced MOCVD reactor system that delivers uniform and precise oxide deposition on multiple substrates. Its intuitive and flexible platform provides remarkable flexibility and control for precise deposition of metal oxide compounds, making it an ideal choice for high FOV applications.
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