Used AMAT / APPLIED MATERIALS Centura 5200 #9182239 for sale

AMAT / APPLIED MATERIALS Centura 5200
ID: 9182239
Wafer Size: 8"
Vintage: 1997
SACVD System, 8" Process: eMax Mainframe AC Power rack Chiller: Buffer chamber Cool down chamber with NBLL HEWLETT-PACKARD Robot Wafer shape: SNNF SMIF Interface: NO Chamber A / B / C: eMax Chamber F: Orientor Load lock A / B: Narrow (6) Wafer sensors SMIF: No EPD Controller Chamber A / B / C: RF Match: 0010-30686 RF Generator: OEM-28B ALCATEL ATH1600M Turbo pump Throttle valve MKS TYPE627 1TORR Mono meter Mainframe information: System placement: System alone Robot type: HP+ L/L Wafer mapping Slit valve & plate type: Standard Robot blade: AL W/F Slippage sensor N2 Purge Heat exchanger (Chiller): No System monitor: Stand alone System placement: System alone Dry pumps: Chamber A / B / C / D: No Load lock: No Transfer: No Gas panel configuration: Chamber A / B / C: (6) Channels SF6 / 100 Sccm / STEC SEC-7740 N2 / 100 Sccm / STEC SEC-7740 O2 / 100 Sccm / STEC SEC-7740 CF4 / 100 Sccm / STEC SEC-7740 CHF3 / 200 Sccm / STEC SEC-7740 AR / 200 Sccm / STEC SEC-7740 Missing parts: (2) Slit valves Electrical: Line frequency: 50 / 60 Hz Power: 208 VAC, 4 Wires, 3 Phase delta 1997 vintage.
AMAT / APPLIED MATERIALS Centura 5200 is a highly advanced reactor used for chemical vapor deposition (CVD) of silicon wafers at various temperatures and pressure levels. This reactor features a unique dual-affiliate cell design which offers superior uniformity and homogeneity of the deposited materials. This reactor is equipped with multiple components to support the most advanced CVD processes. This includes a multi-zone linear heater power supply, multiple gas sources and controls, multiple RF and microwave sources, a vacuum system, and a four-stage pressure controller. This reactor also contains a fixed susceptor, allowing for excellent temperature uniformity on the wafer. AMAT Centura 5200 offers two different chamber types, either a circular or rectangular chamber. Each chamber is able to accommodate up to sixteen 2-inch or four 8-inch wafers and can withstand temperatures up to 1200°C. This allows for the deposition of materials such as silicon dioxide, silicon nitride and silicon carbide without any thermal degradation. The reactor can be operated in either manual or fully automated modes wherein the user can control parameters such as the pressure, flow rates, and time for each process. This makes the reactor capable of providing repeatable and consistent process results. For process monitoring and control, APPLIED MATERIALS Centura 5200 features in-situ diagnostics, including quartz oscillator and quadrupole mass spectrometer (QMS). AMAT can also be integrated with a full suite of process control software for process optimization and programmable recipes. Centura 5200 is designed to provide uniform deposition rates and a consistent refractive index of deposited materials. With its compact and reliable design, it is an excellent choice for semiconductor process integration and advanced materials research applications.
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