Used AMAT / APPLIED MATERIALS Centura 5200 #9182239 for sale
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ID: 9182239
Wafer Size: 8"
Vintage: 1997
SACVD System, 8"
Process: eMax
Mainframe
AC Power rack
Chiller:
Buffer chamber
Cool down chamber with NBLL
HEWLETT-PACKARD Robot
Wafer shape: SNNF
SMIF Interface: NO
Chamber A / B / C: eMax
Chamber F: Orientor
Load lock A / B: Narrow
(6) Wafer sensors
SMIF: No
EPD Controller
Chamber A / B / C:
RF Match: 0010-30686
RF Generator: OEM-28B
ALCATEL ATH1600M Turbo pump
Throttle valve
MKS TYPE627 1TORR Mono meter
Mainframe information:
System placement: System alone
Robot type: HP+
L/L Wafer mapping
Slit valve & plate type: Standard
Robot blade: AL
W/F Slippage sensor
N2 Purge
Heat exchanger (Chiller): No
System monitor: Stand alone
System placement: System alone
Dry pumps:
Chamber A / B / C / D: No
Load lock: No
Transfer: No
Gas panel configuration:
Chamber A / B / C:
(6) Channels
SF6 / 100 Sccm / STEC SEC-7740
N2 / 100 Sccm / STEC SEC-7740
O2 / 100 Sccm / STEC SEC-7740
CF4 / 100 Sccm / STEC SEC-7740
CHF3 / 200 Sccm / STEC SEC-7740
AR / 200 Sccm / STEC SEC-7740
Missing parts:
(2) Slit valves
Electrical:
Line frequency: 50 / 60 Hz
Power: 208 VAC, 4 Wires, 3 Phase delta
1997 vintage.
AMAT / APPLIED MATERIALS Centura 5200 is a highly advanced reactor used for chemical vapor deposition (CVD) of silicon wafers at various temperatures and pressure levels. This reactor features a unique dual-affiliate cell design which offers superior uniformity and homogeneity of the deposited materials. This reactor is equipped with multiple components to support the most advanced CVD processes. This includes a multi-zone linear heater power supply, multiple gas sources and controls, multiple RF and microwave sources, a vacuum system, and a four-stage pressure controller. This reactor also contains a fixed susceptor, allowing for excellent temperature uniformity on the wafer. AMAT Centura 5200 offers two different chamber types, either a circular or rectangular chamber. Each chamber is able to accommodate up to sixteen 2-inch or four 8-inch wafers and can withstand temperatures up to 1200°C. This allows for the deposition of materials such as silicon dioxide, silicon nitride and silicon carbide without any thermal degradation. The reactor can be operated in either manual or fully automated modes wherein the user can control parameters such as the pressure, flow rates, and time for each process. This makes the reactor capable of providing repeatable and consistent process results. For process monitoring and control, APPLIED MATERIALS Centura 5200 features in-situ diagnostics, including quartz oscillator and quadrupole mass spectrometer (QMS). AMAT can also be integrated with a full suite of process control software for process optimization and programmable recipes. Centura 5200 is designed to provide uniform deposition rates and a consistent refractive index of deposited materials. With its compact and reliable design, it is an excellent choice for semiconductor process integration and advanced materials research applications.
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