Used AMAT / APPLIED MATERIALS Centura ACP #293592988 for sale
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ID: 293592988
Wafer Size: 12"
Vintage: 2010
EPI System, 12"
CIM: SECHS / GEM
Process: Epitaxi
SiCoNi pre clean chamber
(2) Chambers: RP, EPI
Buffer
FOUP
(2) SiCoNi heatexchangers
(2) AC powerboxs
2010 vintage.
AMAT / APPLIED MATERIALS Centura ACP Reactor is a state-of-the-art chemical vapor deposition (CVD) tool designed to facilitate superior edge-defined film-fed growth (EFG) of thin-film materials on substrates. It is ideal for applications in manufacturing small-volume, high-performance optical, semiconductor and MEMS device layers. Highly efficient and cost-effective, AMAT Centura ACP Reactor enables superior film uniformity over both large and small areas and is set to revolutionize chip fabrication across the industry. At its heart, APPLIED MATERIALS Centura ACP Reactor features a novel high-efficiency direct plasma source that maximizes process control while minimizing film non-uniformity, even with fast wafer scan rates. This is due to its low gas flow, allowing spatially localized film growth and improved deposition rate control for uniform deposition profiles. This complex incorporation of technology provides more precise and economical EFG capabilities than any existing equipment. Centura ACP is further equipped with a responsive In-Situ Etch (I-S-E) capability, allowing for the on-site fabrication of complex process components and thin-film layers. It offers highly efficient etching, deposition and surface modification techniques in one system, eliminating the need for costly and often time-consuming etch-downs. Additionally, AMAT / APPLIED MATERIALS Centura ACP is equipped with an advanced gas bottle mount unit, providing safe and easy access to multiple reagents. Other innovative features of AMAT Centura ACP Reactor include the new patented substrate mount, offering optimal thermal stability and minimal heat loss. This minimizes thermal gradients and ensures uniformity during film growth without the need for complex thermal management systems. Furthermore, the machine is equipped with a patented in- and out-of-chamber (IOCC) mixing chamber and gas mixing technology. This allows for precise gas mixing and delivery at the film growth zone, allowing for a range of gas concentrations and control of film growth rates. APPLIED MATERIALS Centura ACP Reactor is an impressive advancement in CVD technology. By offering a range of innovative features, it facilitates efficient and reliable uniformity and performance over both large and small areas. It is ideally suited to applications in the manufacture of semiconductor, MEMS and optical thin-film devices, enabling faster, more cost-effective fabrication while providing unparalleled levels of control. Centura ACP Reactor is set to be a game-changer in the industry, revolutionizing chip fabrication through advanced EFG technology.
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