Used AMAT / APPLIED MATERIALS Centura AP DPS II Polysilicon #9208337 for sale

ID: 9208337
Wafer Size: 12"
Polysilicon etcher, 12" Wafer Size: Diameter: 300 +/- 0.05mm 775 +/- 25um Notch Carrier: FOUP With SEMI E47.1 (25 Wafers) Water leak detector Regulated N2 gas supply line Corrosion resistant FI & SWLL Heated SWLL With ceramic diffusers Transfer chamber: Accelerator Loadlock isolation / Slit valve: AP Chemraz 513 elastomer Atmospheric robot: KAWASAKI Single fixed robot with Edgegrip (3) Loadports Loadport type: Enhanced 25 wafer FOUP (3) Light towers EMO Type: Turn to release System monitor: Flat panel: Monitor 1 With keyboard on stand Monitor cable lengths: 25ft With 16ft effective IPUP Type: ALCATEL A100L / TOYOTA 0395-11103 Supporting remote units: Etch common AC rack (DPS II): Cutler hammer blue AC rack (19) Kits for AC rack Chillers (DPS II): (2) H2000 & (4) SMC496 Coolant: DIEG / Galden Chiller hose length: 75 Feet Hardware configuration: Process chamber: 1 - 4 DPS-II With AGN Chamber hardware assy: MS411037-XA-BMA1A (24 Kit assemblies) Endpoint type (Eye D IEP) Plasma state monitor ESC Type: ESC, ASSY, DPS2 Single ring: Ceramic single ring With (12) pockets TMP SHIMADZU 3400l: TMP 3000 l/s, BOC EDWARDS Upper chamber liner Lower chamber liner Inner SV door Tunable gas nozzlez: With ceramic weldment RF Generator: 3 kW / 13.56 MHz, DPS2 1 Bottom RF Generator: 1.5 kW / 13.56 MHz, DS2 2 Bottom Bias match: DPS2 Source match: DPS2 O-ring kit for process express: KALREZ 8085 ESR80WN: EABARA Gas box configuration: Gas line 1: Cl2 100 sccm GF125 Gas line 2: HCl 200 sccm GF125 Gas line 3: HBr 600 sccm AE-PN780CBA Gas line 4: SiF4 200 sccm GF125 Gas line 5: N2 200 sccm GF125 Gas line 6: O2 200 sccm GF125 Gas line 7: O2/He 50 sccm GF125 Gas line 8: SF6 200 sccm GF125 Gas line 9: SF6 50 sccm GF125 Gas line 10: CF4 200 sccm GF125 Gas line 11: CHF3 200 sccm GF125 Gas line 12: Ar 400 sccm GF125 Gas panel: Standard Process kit configuration: Consumables Gas weldment O-ring: 250 rf Hours Swap parts Missing parts: Qty / Description / P/N (1) / View window / 0200-36461 (1) / 10 torr Gauge / 135-00013 (1) / Ion gauge / 3310-0006 (1) / Bias match / 0190-03009 (1) / HV / 0090-00865 (1) / Foreline gauge / 1350-01232 (1) / Ion gauge ISO valve / 3870-00021 (1) / Monochrometer EPD / 0010-05478 (1) / Slit door irons / 0020-64587 (1) / Slit door bellow / 0040-76767 (1) / NA Heated weldment tee KF 40 warranty / 0190-23502 (1) / Heated weldment 7.09 KF 40 R warranty / 0190-23503 (1) / Ion gauge ISO valve / 3870-00021 (1) / Ion gauge / 3310-00006 (1) / Heated weldment 7.09 kf 40 r warranty / 0190-23503 (1) / Ion gauge ISO valve / 3870-00021 (1) / Ion gauge / 3310-00006 (1) / Bias match / 0190-03009 (1) / Foreline gauge / 1350-01232 (1) / HV / 0090-00865 (1) / MF Robot driver / 0190-17853 (3) / E84 Cables (2) / Special gas pipes Qty / Chamber / Description (1) / CHA / Pressure switch 10 torr (1) / CHB / Check valve (1) / CHB / Pressure switch 10 torr (1) / CHC / Pressure switch 10 torr (1) / CHC / Check valve (1) / CHC / View port window.
AMAT / APPLIED MATERIALS Centura AP DPS II Polysilicon Reactor is an advanced production equipment designed for producing high purity polysilicon for the semiconductor industry. This sophisticated system utilizes three distinct process executions—argon plasma doping (APD), charge floating layer (CFL) and silicon implantation (SI)—to achieve an optimal level of purity in the produced polysilicon. The APD process utilizes argon plasma doping technology, which introduces arsenic or phosphorus dopants into the surface of the polysilicon wafer, allowing for changes in conductivity and precise control over the material's electronic properties. The CFL process utilizes a floating charge layer (FCL) to regulate dopant movement, providing flexibility in dopant selection and improved process control. Finally, the SI process utilizes an ion implantation process to introduce a unique substrate surface into a polysilicon wafer, providing accurate control over its electrical properties and improved wafer quality. AMAT Centura AP DPS II Polysilicon Reactor is designed to enable a high-speed, multi-chamber approach to producing polysilicon, allowing for simultaneous processing of up to six full-size every hour. This makes it ideal for large-scale production requirements. With its customization capability, users can configure the unit to create a variety of output specifications, such as as-grown carrier concentrations, rapid thermal annealing (RTA), and polysilicon deposition. This allows for further accelerated processing times. The machine is integrated with six key components: 1) a gas delivery tool; 2) a vacuum asset; 3) a contamination control model; 4) a process chamber; 5) an electronics unit, and 6) a micro-laminating equipment. The gas delivery system ensures that all necessary gases and dopants are supplied in a safe and efficient manner. The vacuum unit removes any volatile contaminants from the environment and controls the machine's pressure. The contamination control tool includes advanced scrubbing technology for purifying the environment before and after each procedure. The process chamber is designed to keep substances at the required temperature and pressure levels, as well as providing a truly clean environment. The electronics unit monitors and records all asset operations, as well as providing a variety of model control features. Finally, the micro-lamination equipment allows for accurate material deposition and control. In summary, APPLIED MATERIALS Centura AP DPS II Polysilicon Reactor is an advanced production system for the semiconductor industry. It utilizes three distinct process executions—argon plasma doping (APD), charge floating layer (CFL) and silicon implantation (SI)—to achieve an optimal level of purity of the produced polysilicon. The unit is capable of producing up to six full-size wafers per hour, and can be customized for a variety of wafer specifications. The machine is further integrated with six key components—a gas delivery tool, vacuum asset, contamination control model, process chamber, electronics unit, and micro-laminating equipment—for achieving the highest levels of quality and efficiency.
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