Used AMAT / APPLIED MATERIALS Centura DPS R1 #9189045 for sale

AMAT/APPLIED MATERALS AMAT / APPLIED MATERIALS Centura DPS R1 is a leading-edge reactor designed for plasma-enhanced deposition process technologies. The DPS R1 is designed to deposit dielectric, insulator and barrier layers for semiconductor device fabrication. The reactor is an optimal solution for maximizing device yield and performance while meeting the most stringent process requirements. The DPS R1 has a Low Temperature Plasma (LTPTM) source, allowing temperature-sensitive processes to be performed with improved process stability and throughput. It also features a refractory metal ion injection option (RMIIO) which helps maintain a uniform plasma ion species distribution that contributes to defect-free deposition. The DPS R1 has an open-tube design which enables efficient delivery and uniformity of the reactive plasma species to the wafer surface. The automated remote plasma source (RPS) makes it easy to adjust the operating parameters of the reactor, and the SmartPlasmaTM control technology ensures fast and repeatable adjustments. The reactor's Advanced Edge-exclusion System (AES) prevents wafer edge effects and ensures uniformity throughout the deposition process. The Closed-loop Pulse Power™ (CLPP) offers easy power control and stable plasma parameters to maintain desired target specifications. The Multi-zone Magnetic Substrate Control (MMSC) helps to reduce off-axis shadowing effects and ensures precise positioning of substrates on the wafer chuck. The DPS R1 also provides a range of modular options such as an auxiliary electrode for broadening plasma coverage and an Advanced Substrate-Movement Mechanical System (ASMS) for precise sweep control. The reactor also has an energy-saving ATC outlet option and a multizone electrostatic chuck with robust thermal management for substrates up to 8" diameter. The DPS R1 ensures precise control of chamber parameters, plasma species and power levels. Furthermore, this advanced reactor allows for high throughput and lower cost of ownership due to its comprehensive design. It is suitable for temperatures and processes ranging from below 600°C to above 800°C and is well-suited for various applications such as deposition of memory dielectric layers, high-k barrier materials, low-k dielectric layers and more.