Used AMAT / APPLIED MATERIALS Centura DxL #9294554 for sale

AMAT / APPLIED MATERIALS Centura DxL
ID: 9294554
Wafer Size: 8"
CVD System, 8".
AMAT / APPLIED MATERIALS Centura DxL Reactor is a semiconductor device designed to process materials used in the fabrication of electronic components. AMAT Centura DxL relies on chemical vapor deposition (CVD) techniques to deposit thin films onto ceramic substrates at precise rates, thicknesses, and conformality. This reactor combines process automation, reliable performance, and enhanced productivity to provide excellent yields and improved process control. APPLIED MATERIALS Centura DxL utilizes argon as a carrier gas and nitrogen, hydrogen, and oxygen as reactant gases in order to deposit films of various materials. The reactor operates in a hot wall configuration, with four heated gas lines and two heated showerhead lines to deliver the reactant gases. The system is equipped with 50.8 cm (20") and 101.6 cm (40") quartz tubes, allowing it to process substrates of various sizes. The films deposited by Centura DxL have a uniform thickness, with a tolerance of ±0.1 µm for films thicker than 0.3 µm. The reactor is capable of deposition rates ranging from 0.0001 µm/min up to 20 µm/min. AMAT / APPLIED MATERIALS Centura DxL also incorporates advanced diagnostic and control components to ensure a consistent and reliable process. Its advanced process control system is capable of automatically optimizing processes to maximize yield. An advanced lifecycle monitoring system allows users to track process and equipment parameters over time, enabling users to solve potential problems and take preventative action before they become issues. AMAT Centura DxL Reactor is ideal for applications in the semiconductor industry, including deposition of thin films for transistor gates, dielectric deposition, and metallization. Because of its reliable performance, process automation, and enhanced productivity, APPLIED MATERIALS Centura DxL Reactor is an ideal choice for any application that requires precise control during the deposition process.
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