Used AMAT / APPLIED MATERIALS Centura DxZ #9184346 for sale

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ID: 9184346
Wafer Size: 8"
Vintage: 1997
CVD System, 8" Mainframe information: Phase 2 Robot type: HP LoadLock type: NBLL SMIF: X Process chambers: Chamber A Chamber B Chamber C Chamber D Cooldown chamber: Chamber E: MSCD Orient chamber: Chamber F: X (4) Process chambers Process: CVD Application: DXZ System controller: UPS Generator: Chamber A: RFG 2000-2V Chamber B: RFG 2000-2V Chamber C: RFG 2000-2V Chamber D: RFG 2000-2V Bottom module: Chamber A: 0090-01805 Chamber B: 0090-01805 Chamber C: 0090-01805 Chamber D: 0090-01805 Heater lift: Chamber A: 0010-38426 Chamber B: 0010-38426 Chamber C: 0010-38426 Chamber D: 0010-38426 Baratron: Model Torr Chamber A 626A11TBE 10Torr Chamber B 626A11TBE 10Torr Chamber C 626A11TBE 10Torr Chamber D 626A11TBE 10Torr Baratron: Model Torr Chamber A 122BA-00100EBS 100Torr Chamber B 122BA-00100EBS 100Torr Chamber C 122BA-00100EBS 100Torr Chamber D 122BA-00100EBS 100Torr Gas control : SERIFLEX TYPE Gas panel: Chamber A: LINE1 SiH4 500sccm UNE2 NH3 500sccm LINE3 N2 5SLM LINE4 SiH4 200sccm LINE7 H2 5SLM LINE8 N20 1SLM LINE9 CF4 3 SIM SIDE N20 500sccm Chamber B: LINE1 X LINE2 NH3 500sccm LINE3 N2 5SLM LINE4 SiH4 200sccm LINE7 H2 7SLM LINE8 N20 1SLM LINE9 CF4 3 SLM SIDE N20 500sccm Chamber C: LINE1 X LINE2 NH3 500sccm LINE3 N2 5SLM LINE4 SiH4 300sccm LINE7 H2 7SLM LINE8 N20 1SLM LINE9 CF4 3SLM SIDE N20 500sccm Chamber D: LINE1 N20 3SLM LINE2 NH3 500sccm LINE3 N2 5SLM LINE4 SiH4 300sccm LINE7 H2 7SLM LINE8 N20 1SLM LINE9 CF4 3 SIM SIDE N20 500sccm Packing list: Mainframe AC Remote rack Generator rack (2) Part boxes Power: 208VAC 1997 vintage.
AMAT / APPLIED MATERIALS Centura DxZ is a suitably designed and engineered reactor with advanced materials engineering and process capability. This reactor can be used for a variety of processes such as deposition, etching, and thermal annealing and has been specifically designed to meet the requirements of a variety of applications. AMAT Centura DxZ reactor has an efficient and stable design that is capable of achieving high process throughput and repeatability. This is achieved by the combination of high stability and accuracy, high-quality and durable components, and a robust, flexible chamber design that is tailored to customer needs. This makes APPLIED MATERIALS Centura DxZ reactor a preferred choice for many industries when high process results are required. Centura DxZ reactor is equipped with an advanced vacuum chamber which allows for high-repeatability and low-temperature baking for high-rate processes. The chamber can be configured for a variety of specific use-cases, ranging from coating and masking, to etching or deposition. This variety of processes allows for a broader range of substrate compositions and temperatures, and enables the reactor to be used for a multitude of applications, eliminating the need for multiple reactors. AMAT / APPLIED MATERIALS Centura DxZ also comes with an automated adaptive control system that works with the reactor to ensure maximum precision, repeatability, and throughput, while at the same time reducing user intervention. This system also helps reduce scrap and improve cycle times, while providing diagnostic and process control tools that enable remote performance optimization and cycle time optimization. The positioning of the wafer on AMAT Centura DxZ is also made easy thanks to the auto centering and clamping mechanism, which allows for precision placement and alignment without manual assistance. Additionally, the reactor also comes equipped with a temperature uniformity sensor that provides real-time temperature control during processes, ensuring a homogeneous temperature during the entire process. Overall, APPLIED MATERIALS Centura DxZ reactor has been designed for flexibility and reliability, and can meet demanding process requirements across a variety of applications. The reactor is precision-controlled, efficient and durable, helping to significantly decrease cycle times and increase output, whilst reducing the need for multiple reactors and manual intervention.
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