Used AMAT / APPLIED MATERIALS Centura DxZ #9184346 for sale
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ID: 9184346
Wafer Size: 8"
Vintage: 1997
CVD System, 8"
Mainframe information: Phase 2
Robot type: HP
LoadLock type: NBLL
SMIF: X
Process chambers:
Chamber A
Chamber B
Chamber C
Chamber D
Cooldown chamber:
Chamber E: MSCD
Orient chamber:
Chamber F: X
(4) Process chambers
Process: CVD
Application: DXZ
System controller: UPS
Generator:
Chamber A: RFG 2000-2V
Chamber B: RFG 2000-2V
Chamber C: RFG 2000-2V
Chamber D: RFG 2000-2V
Bottom module:
Chamber A: 0090-01805
Chamber B: 0090-01805
Chamber C: 0090-01805
Chamber D: 0090-01805
Heater lift:
Chamber A: 0010-38426
Chamber B: 0010-38426
Chamber C: 0010-38426
Chamber D: 0010-38426
Baratron: Model Torr
Chamber A 626A11TBE 10Torr
Chamber B 626A11TBE 10Torr
Chamber C 626A11TBE 10Torr
Chamber D 626A11TBE 10Torr
Baratron: Model Torr
Chamber A 122BA-00100EBS 100Torr
Chamber B 122BA-00100EBS 100Torr
Chamber C 122BA-00100EBS 100Torr
Chamber D 122BA-00100EBS 100Torr
Gas control : SERIFLEX TYPE
Gas panel:
Chamber A:
LINE1 SiH4 500sccm
UNE2 NH3 500sccm
LINE3 N2 5SLM
LINE4 SiH4 200sccm
LINE7 H2 5SLM
LINE8 N20 1SLM
LINE9 CF4 3 SIM
SIDE N20 500sccm
Chamber B:
LINE1 X
LINE2 NH3 500sccm
LINE3 N2 5SLM
LINE4 SiH4 200sccm
LINE7 H2 7SLM
LINE8 N20 1SLM
LINE9 CF4 3 SLM
SIDE N20 500sccm
Chamber C:
LINE1 X
LINE2 NH3 500sccm
LINE3 N2 5SLM
LINE4 SiH4 300sccm
LINE7 H2 7SLM
LINE8 N20 1SLM
LINE9 CF4 3SLM
SIDE N20 500sccm
Chamber D:
LINE1 N20 3SLM
LINE2 NH3 500sccm
LINE3 N2 5SLM
LINE4 SiH4 300sccm
LINE7 H2 7SLM
LINE8 N20 1SLM
LINE9 CF4 3 SIM
SIDE N20 500sccm
Packing list:
Mainframe
AC Remote rack
Generator rack
(2) Part boxes
Power: 208VAC
1997 vintage.
AMAT / APPLIED MATERIALS Centura DxZ is a suitably designed and engineered reactor with advanced materials engineering and process capability. This reactor can be used for a variety of processes such as deposition, etching, and thermal annealing and has been specifically designed to meet the requirements of a variety of applications. AMAT Centura DxZ reactor has an efficient and stable design that is capable of achieving high process throughput and repeatability. This is achieved by the combination of high stability and accuracy, high-quality and durable components, and a robust, flexible chamber design that is tailored to customer needs. This makes APPLIED MATERIALS Centura DxZ reactor a preferred choice for many industries when high process results are required. Centura DxZ reactor is equipped with an advanced vacuum chamber which allows for high-repeatability and low-temperature baking for high-rate processes. The chamber can be configured for a variety of specific use-cases, ranging from coating and masking, to etching or deposition. This variety of processes allows for a broader range of substrate compositions and temperatures, and enables the reactor to be used for a multitude of applications, eliminating the need for multiple reactors. AMAT / APPLIED MATERIALS Centura DxZ also comes with an automated adaptive control system that works with the reactor to ensure maximum precision, repeatability, and throughput, while at the same time reducing user intervention. This system also helps reduce scrap and improve cycle times, while providing diagnostic and process control tools that enable remote performance optimization and cycle time optimization. The positioning of the wafer on AMAT Centura DxZ is also made easy thanks to the auto centering and clamping mechanism, which allows for precision placement and alignment without manual assistance. Additionally, the reactor also comes equipped with a temperature uniformity sensor that provides real-time temperature control during processes, ensuring a homogeneous temperature during the entire process. Overall, APPLIED MATERIALS Centura DxZ reactor has been designed for flexibility and reliability, and can meet demanding process requirements across a variety of applications. The reactor is precision-controlled, efficient and durable, helping to significantly decrease cycle times and increase output, whilst reducing the need for multiple reactors and manual intervention.
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