Used AMAT / APPLIED MATERIALS Centura Epi 300 #293831750 for sale
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ID: 293831750
Wafer Size: 12"
Vintage: 2018
System, 12"
Control architecture type: NON-HRTS / ECAT
Chamber pyrometry
High precision
Loader unit type: FI 6.3
Thickness of intrinsic Si ≃16 for wafer/hour: 2.3 µm
No of cassettes / Chambers:
(3) Load Ports
(4) Chambers
(2) Single Wafer Load Lock (SWLL)
Gas boxes:
Dual gas panel H2 leak detector
CSG NPI: Nextgen GP (per Twin)
Panel feed: Bottom
Type: STEC Z700X
VENTURI Purge pump
Regulator
Gas pallet Nextgen:
Special process capability: XFLOW
(2) Independent mixers
2018 vintage.
AMAT / APPLIED MATERIALS Centura Epi 300 is a flagship epitaxial reactor designed for advanced semiconductor manufacturing processes. Epitaxy, in the context of semiconductor fabrication, involves the growth of a crystalline layer of semiconductor material on top of a substrate to create intricate structures essential in the production of modern electronic devices. AMAT Centura Epi 300 reactor is a sophisticated tool that offers precise control over film deposition, enabling the production of high-quality materials with remarkable uniformity and reproducibility. At the heart of APPLIED MATERIALS Centura Epi 300 reactor is a state-of-the-art process chamber equipped with multiple gas inlets, a high-temperature heater, and a substrate holder capable of accommodating various wafer sizes. The equipment is designed to operate under ultra-high vacuum conditions to ensure a clean and controlled environment for epitaxial growth. The reactor's chamber features advanced temperature control mechanisms that allow for the precise adjustment of substrate temperatures during the deposition process, critical for achieving the desired material properties. Centura Epi 300 reactor utilizes a combination of chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) techniques to facilitate the growth of epitaxial layers with exceptional purity and structural integrity. The reactor is equipped with a sophisticated gas delivery system that enables the introduction of precursor gases into the chamber at precise flow rates and compositions, essential for controlling the deposition kinetics and material properties. Additionally, the unit features advanced plasma-enhanced techniques that enhance film quality and promote surface reactions necessary for epitaxial growth. AMAT / APPLIED MATERIALS Centura Epi 300 reactor offers a high degree of versatility, allowing for the deposition of a wide range of semiconductor materials, including silicon, gallium arsenide, and indium phosphide, among others. The machine supports deposition processes for both thick and thin films, enabling the fabrication of complex semiconductor structures with multilayer compositions. The reactor's advanced process control software provides users with intuitive interfaces for programming deposition recipes, monitoring process parameters, and analyzing growth data in real-time. One of the key strengths of AMAT Centura Epi 300 reactor is its scalability and production efficiency, making it ideal for high-volume semiconductor manufacturing environments. The tool is designed to deliver high throughput and yield, enabling manufacturers to meet stringent quality and productivity requirements in today's competitive semiconductor industry. APPLIED MATERIALS Centura Epi 300 reactor's robust design and reliable performance make it a preferred choice for leading semiconductor manufacturers seeking to produce cutting-edge devices with superior functionality and performance. In conclusion, Centura Epi 300 epitaxial reactor represents a pinnacle of epitaxial deposition technology, offering unparalleled precision, versatility, and efficiency for semiconductor manufacturing applications. With its advanced features, state-of-the-art capabilities, and exceptional performance, AMAT / APPLIED MATERIALS Centura Epi 300 reactor is a cornerstone tool in the production of advanced semiconductor devices that power the modern electronics industry.
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