Used AMAT / APPLIED MATERIALS Centura Epi #293621413 for sale

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ID: 293621413
Wafer Size: 6"-8"
Vintage: 2004
System, 6"-8" (3) ATM Epi Chambers Flow point: Nano valve Gas panel M-Monitor: CRT SIEMENS PLC with Digital flow control with interlock and passphrase CB1 Amps: 300 A HDD upgraded to RAID V452 SBC Board Serial isolator (2) Leak detect / System reset OTF / Centre find Chamber A, B, C: Interlock M/F Interlock Loadlock Interlock Chamber A, B, C DI / O1 DI / O2 Chamber D: DI / O2 Chamber E: DI / O0 SBC Video I/O Expansion SEI Chamber A, B, C, D: AIO Mainframe AI01 CH E / MF AI02 Mainframe: DI01, DI02, DI03, DI04, DI05, DI06 Mainframe Stepper 1 Robot and indexer stepper: VX2 2004 vintage.
AMAT / APPLIED MATERIALS Centura Epi is a reactor specifically designed for use in the production of semi-conductive devices. This reactor is capable of performing vapor deposition and epitaxial processing, the major method for depositing thin films and creating multi-layered devices such as integrated circuits. With its high throughput, high temperature, and high uniformity, AMAT Centura Epi reactor is one of the most powerful tools for the development of advanced semiconductor technologies. APPLIED MATERIALS Centura Epi reactor is developed to be a robust and reliable equipment utilizing advanced process technology and featuring an integrated hardware and software environment. It's equipped with high-precision movements, advanced thermal and electrical control, and a powerful, yet easy-to-use, software-based interface. The main components of Centura Epi reactor include an electron-emitting substrate holder, baffle and gas injection system for product control and cleaner production, a gas sieving field-effect device and control unit, a direct-current evaporation source, and an electro-magnetic and surface-wave generator. The substrate holder is fitted with a range of electronic devices, enabling it to maintain a uniform temperature profile. This helps minimize thermal fluctuations and provide uniform growth of thin films and epitaxial layers. The baffle and gas injection machine support the product-control capabilities, allowing the user to precisely control and maintain an environment within predetermined parameters. The gas sieving field-effect device enables high-efficiency product control, reducing gas contamination by preventing the entry of foreign or unwanted materials. The direct-current-evaporation source delivers highly uniform, high-rate evaporation of material from any source, ensuring higher quality growth and depositions. Finally, the electro-magnetic and surface-wave generator provides compatibility with the widest range of circulating and static components, further protecting the output from harm or damage. In conclusion, AMAT / APPLIED MATERIALS Centura Epi tool is an advanced, efficient, and reliable reactor, which provides a high-throughput and uniform growth environment for the production of integrated circuits and other semi-conductive devices. It's designed with an integrated hardware and software environment and contains a range of advanced features, enabling users to accurately control the environment and produce high-quality results.
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