Used AMAT / APPLIED MATERIALS Centura Epi #9137479 for sale
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ID: 9137479
Wafer Size: 8"
Vintage: 1995
CVD Reactors, 8"
Chamber type:
Position A : HTF Nitride
Position B : HTF Nitride
Position F : (CA) Single slot cooldown
Electrical requirements
Line voltage : 480V With transformer
Line frequency : 60 HZ
Line amperage : 600A
System safety:
EMO Switch type : Momentary EMO
EMO Guard ring
HTF NITRIDE EPI
RP Pressure chamber
Thickness control options : BMV
Third manometer : 200 TORR
Leak check port
RGA Port and valve
HTF NITRIDE EPI :
RP Pressure Chamber Selected Option
Thickness Control Options BMV
Third Manometer 200 TORR
Gas Line Isolation
Leak check port
RGA Port and Valve
Gas Delivery Options:
Epi Gas Delivery Options:
Gas Panel Type Surface Mount Gas Panel
Gas Panel Exhaust CHAMBER B SIDE
MFC : AREA,UNIT,STEC,ETC
Filter Milipore
Pump Purge
CH A Gas Options
CH A ATM Pressure
CH A H2
CH A N2
CH A SIH4
CH A SIH4
CH A H2
CH A NF3
CH B Gas Options:
CH B ATM Pressure
CH A H2
CH A N2
CH A SIH4
CH A SIH4
CH A H2
CH A NF3
Mainframe
Loadlock
Loadlock Type : Wide body
Cassette Platform Type : Universal
Common Chamber Options :
Variable Speed Blower
SWmonitor Quartz Pyrometer Kit 2
Lamps Type USHIO BNA6
Susceptors STANDARD NCP
Brands XYCARB
Lift Pin Type HOLLOW SILICON CARBIDE
Susceptor Support Shaft NCP SUSCEPTOR SUPPORT SHAFT
Tips SILICON CARBIDE REMOVABLE TIPS
Exhaust Inserts Quartz
Transfer Chamber
Wafer Sensing : OTF
Transfer chamber Lid Hoist :
Robot :HP ENP
Transfer Chamber Purge 15 SLM
Diagnostics and Control :
SecsTrac
Remotes :
System controller :
Controller Plexiglass Cover
Flash Memory Drive : SCSI
Vacuum pumps :
Loadlock chamber pump : Edwards QDP40
Process chamber pump : Edwards QDP80
System Monitors:
Monitor Type : CRT
(1) Monitor
Wall
(1) Table mount
Cable Lengths (Effective) :
Controller to Mainframe : 23 ft
Controller to Pump : 48 ft
Controller To TTW Monitor : 50 ft
Controller to table Mount Monitor : 24 ft
1995 vintage.
AMAT / APPLIED MATERIALS Centura Epi is a leading-edge multi-zone equipment for the deposition of epitaxial layers. This reactor uses a highly efficient design, thanks to its highly optimized injector, even heating zones, and low temperature coefficient of performance. AMAT Centura Epi features an advanced multi-zone injector, which helps to ensure the uniformity of the thick layers by using a diffusion controlled process. This injector has a high throughput and a low temperature coefficient of performance, making it highly efficient in its operations. The reactor has heating zones with an advanced thermal processing, which helps to provide an even and uniform heating of the substrate. This allows for uniformity of thermal layers, which helps to maintain the highest yields of epitaxial layers during the deposition process. APPLIED MATERIALS Centura Epi is designed to be highly reliable by incorporating a vacuum pump and a gas blower system. These systems help in controlling the vacuum pressure, as well as providing a steady flow of gas. This ensures a stable and consistent environment for the deposition process. The unit also includes several monitoring and control systems, such as flow rate, pressure, and temperature controls. These systems help to keep the process parameters consistent, ensuring high quality and reliable deposition of epitaxial layers. Centura Epi includes a digital interface for automated data collection, which helps in capturing and analyzing data from the deposition process. This data can be used to adjust the parameters of the machine, helping to optimize the results of the deposition process. AMAT / APPLIED MATERIALS Centura Epi is a high-performance tool designed to enable the deposition of uniform epitaxial layers. This reactor features a highly efficient design, thanks to its multi-zone injector, even heating zones, and low temperature coefficient of performance. Additionally, it also features a range of monitoring and control systems, which helps to ensure the uniformity, reliability, and quality of the deposition process.
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