Used AMAT / APPLIED MATERIALS Centura Epi #9137479 for sale

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ID: 9137479
Wafer Size: 8"
Vintage: 1995
CVD Reactors, 8" Chamber type: Position A : HTF Nitride Position B : HTF Nitride Position F : (CA) Single slot cooldown Electrical requirements Line voltage : 480V With transformer Line frequency : 60 HZ Line amperage : 600A System safety:  EMO Switch type : Momentary EMO EMO Guard ring HTF NITRIDE EPI RP Pressure chamber Thickness control options : BMV Third manometer : 200 TORR Leak check port RGA Port and valve HTF NITRIDE EPI : RP Pressure Chamber Selected Option Thickness Control Options BMV  Third Manometer 200 TORR Gas Line Isolation Leak check port RGA Port and Valve Gas Delivery Options:   Epi Gas Delivery Options: Gas Panel Type Surface Mount Gas Panel Gas Panel Exhaust CHAMBER B SIDE MFC : AREA,UNIT,STEC,ETC Filter Milipore Pump Purge CH A Gas Options   CH A ATM Pressure      CH A H2      CH A N2      CH A SIH4      CH A SIH4      CH A H2      CH A NF3 CH B Gas Options:  CH B ATM Pressure      CH A H2      CH A N2      CH A SIH4      CH A SIH4      CH A H2      CH A NF3 Mainframe  Loadlock      Loadlock Type : Wide body      Cassette Platform Type : Universal  Common Chamber Options :      Variable Speed Blower      SWmonitor Quartz Pyrometer Kit 2      Lamps Type USHIO BNA6      Susceptors STANDARD NCP      Brands XYCARB      Lift Pin Type HOLLOW SILICON CARBIDE      Susceptor Support Shaft NCP SUSCEPTOR SUPPORT SHAFT      Tips SILICON CARBIDE REMOVABLE TIPS      Exhaust Inserts Quartz  Transfer Chamber Wafer Sensing : OTF Transfer chamber Lid Hoist : Robot :HP ENP Transfer Chamber Purge 15 SLM  Diagnostics and Control :  SecsTrac Remotes :  System controller :  Controller Plexiglass Cover  Flash Memory Drive : SCSI Vacuum pumps :  Loadlock chamber pump : Edwards QDP40  Process chamber pump : Edwards QDP80  System Monitors:  Monitor Type : CRT (1) Monitor Wall (1) Table mount Cable Lengths (Effective) :      Controller to Mainframe : 23 ft Controller to Pump : 48 ft Controller To TTW Monitor : 50 ft Controller to table Mount Monitor : 24 ft 1995 vintage.
AMAT / APPLIED MATERIALS Centura Epi is a leading-edge multi-zone equipment for the deposition of epitaxial layers. This reactor uses a highly efficient design, thanks to its highly optimized injector, even heating zones, and low temperature coefficient of performance. AMAT Centura Epi features an advanced multi-zone injector, which helps to ensure the uniformity of the thick layers by using a diffusion controlled process. This injector has a high throughput and a low temperature coefficient of performance, making it highly efficient in its operations. The reactor has heating zones with an advanced thermal processing, which helps to provide an even and uniform heating of the substrate. This allows for uniformity of thermal layers, which helps to maintain the highest yields of epitaxial layers during the deposition process. APPLIED MATERIALS Centura Epi is designed to be highly reliable by incorporating a vacuum pump and a gas blower system. These systems help in controlling the vacuum pressure, as well as providing a steady flow of gas. This ensures a stable and consistent environment for the deposition process. The unit also includes several monitoring and control systems, such as flow rate, pressure, and temperature controls. These systems help to keep the process parameters consistent, ensuring high quality and reliable deposition of epitaxial layers. Centura Epi includes a digital interface for automated data collection, which helps in capturing and analyzing data from the deposition process. This data can be used to adjust the parameters of the machine, helping to optimize the results of the deposition process. AMAT / APPLIED MATERIALS Centura Epi is a high-performance tool designed to enable the deposition of uniform epitaxial layers. This reactor features a highly efficient design, thanks to its multi-zone injector, even heating zones, and low temperature coefficient of performance. Additionally, it also features a range of monitoring and control systems, which helps to ensure the uniformity, reliability, and quality of the deposition process.
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