Used AMAT / APPLIED MATERIALS Centura Epi #9153770 for sale

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ID: 9153770
Wafer Size: 8"
Reactor, 8" WBLL HP Robot (2) EPI chambers (1) Cool Down chamber (4) Dry pumps (1) Transformer System controller rack.
AMAT / APPLIED MATERIALS Centura Epi is an advanced plasma-enhanced chemical vapor deposition (PECVD) reactor used for semiconductor device fabrication. The tool is designed to enable manufacture of high-performance devices with high yields, allowing customers the versatility and capacity to implement advanced lithography strategies. AMAT Centura Epi furnace features a dual substrate process chamber, allowing simultaneous processing of substrates at different temperatures, as well as two independent epi chambers, each with its own process gases, temperature, power and pressure control. This dual-chamber design offers users higher throughput and a wide range of substrate and process options, with the chamber fully depressurized to maintain gas and temperature uniformity throughout the entire processing cycle. The tool provides a modular, compact design and offers flexible integration with other process modules that gives users the highest degree of control over the process, from wafer-level to tool-level. The chamber has been designed for improved efficiency and offers consistent depositions over a wide range of temperatures and process parameters, giving users repeatable and reliable performance for both single- and multi-chamber process recipes. The configuration is also highly versatile and can be easily configured to deliver a wide range of film deposition capabilities such as device-level layers, wafer-level layers, Device on Subscribe (DOS) Substrate Transfer and epi transfer layers. The chamber also provides customers with the opportunity to implement specialty processes such as reflow and wafer thinning. APPLIED MATERIALS Centura Epi has a number of other features that enable users to achieve their desired process parameters, including quartz radiators, nitrogen purging, and shielding features. It also features a unique plasma actuation arrangement that ensures uniformity in layer thickness and device characteristics. The tool is compatible with a range of materials, including silicon, SiO2, SiN, nitride and silicon nitride, and its design allows for high operating temperature range and superior deposition uniformity, improving device yields and reliability. The versatile design of Centura Epi also provides the flexibility needed to implement advanced process strategies and facilitate timely introduction of new device designs.
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