Used AMAT / APPLIED MATERIALS Centura Epi #9249281 for sale

AMAT / APPLIED MATERIALS Centura Epi Reactor is a highly advanced equipment for precise deposition and processing of epitaxial oxide layers during semiconductor device fabrication. AMAT Centura Epi Reactor is equipped with a gas delivery system and a vacuum chamber designed to achieve precise uniformity and precise conformality throughout the processed area. The chamber has a multi-level automation capability, allowing for a variety of process recipes for different epitaxial oxide layers. The Centura's EPI reactor can be used to maximize growth rate and minimize defect density to yield smoothest, densest, and most uniform epitaxial oxide layers available. The global uniformity of the end product ensures robust and reliable device performance. Such uniformity is attained through the combination of superior process automation and advanced deposition mechanics, which can reduce overall process time. The Centura's EPI Reactor is designed with advanced impedance coupling control through four-level modulated RF sources that can provide precise control over epitaxial oxide layer thickness and uniformity. The advanced modulation means that the unit can precisely control the reaction temperature and pressure, as well as other properties like refractive index, waveguide dispersion, and absorption. This enables optimal growth rates and thicknesses during processing. In addition to advanced deposition mechanics, the Centura's EPI Reactor is equipped with a gas delivery machine of up to five independent gas input lines. This allows for deposition of uniform and consistent multi-layer epitaxial oxide layers. For example, an Inductively Coupled Plasma (ICP) source can be used to ionize an input gas and that gas can be precisely dosed into the reaction chamber. The ionized gas then reacts with the other gases to create the desired epitaxial oxide layer. In summary, APPLIED MATERIALS Centura Epi Reactor is a state-of-the-art epitaxial oxide layer deposition tool that delivers precise and uniform epitaxial oxide layers. It is designed with advanced modulated RF sources, multi-level automation and an advanced gas delivery asset to enable optimal conditions for epitaxial oxide layer deposition. With its advanced process control, high-quality epitaxial oxide layers can be achieved in a shorter process time.