Used AMAT / APPLIED MATERIALS Centura Epi #9393367 for sale
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ID: 9393367
Wafer Size: 8"
Vintage: 1998
Reactor, 8"
Type: Silicon cluster plasma
(3) Chambers
External step down transformer
Flash memory drive
VSB Blowers
Accusette controller
Heat exchanger: Grade 1
Mainframe:
Wide body LL
ENP
Upper frame assembly
HP Robot
Transfer chamber
Power supply: 208 VAC, CB 300A
1998 vintage.
AMAT / APPLIED MATERIALS Centura Epi is a stand-alone molecular beam epitaxy (MBE) reactor used for research and for production of deposition and film growth applications, such as those in the photovoltaic and semiconductor industries. AMAT Centura Epi is designed to be user-friendly, mechanical and chemical stable, and power-efficient. Its modular design allows sputtering in three different chambers while MBE is achieved in a fourth chamber. The whole equipment is contained in a compact airtight compact frame, and the chamber walls are coated with deuterium oxide (D2O) to mitigate film contamination. The system is built to vacuum level of 1.0E-9 Torr, while its Ultra-High Vacuum (UHV) level provides a deposition process rate of up to 20 Angstroms per second with a uniformity of up to 20 percent. The unit's loading capability can process samples up to 12 inch diameter, and is further adjustable for processing substrates up to 3 inches in diameter. APPLIED MATERIALS Centura Epi's multi-channel source control allows patterned deposition of up to four elements simultaneously to create epitaxial structures on substrate surfaces. This tool also uses an inter-valve switching machine with electronically controlled power sources and independent process chambers to create bespoke film growths. The tool runs on DC and RF power sources, allowing for the growth of mono-layer and multilayer films. Growth rates can be controlled through the source control's auto start mode and real-time parameter display controls to ensure uniform deposition operations. The RF sources are equipped with impedance matching asset and built-in attenuators to connect to the direct current flow amplifier model. Centura Epi is also outfitted with a cooling equipment to dissipate temperatures up to 300 degrees Celsius. This temperature can also be monitored in real-time with the system's built-in thermocouple controllers. Built-in arm rests, footrests, and ergonomic knobs provide users with a comfortable working experience.It is truly the right tool for anyone seeking ultimate process control in film growth applications.
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