Used AMAT / APPLIED MATERIALS Centura I #9184826 for sale
URL successfully copied!
Tap to zoom
ID: 9184826
Wafer Size: 8"
WCVD System, 8"
WxZ
(3) Chambers
Main body
ENI Generator rack
Monitor rack
System controller
(4) Covers
(2) Cables
Mainframe: Centura I Phase I
Chamber A:
Type: WXZ
RF Generator: OEM-12B
RF Match: Phase IV
Process kit: 200mm
Heater: Ceramic
Back side baratron: MKS 100T
Purge MFC: AR 2000
Lid Assembly: STD
Process baratron:
MKS 100T
MKS 1T
Chamber B:
Type: WXZ
RF Generator: OEM-12B
RF Match: Phase IV
Process kit: 200mm JMF
Heater: Ceramic
Back side baratron: MKS 100T
Purge MFC: AR 2000
Lid Assembly: STD
Process baratron:
MKS 100T
MKS 1T
Chamber D:
Type: WXZ
RF Generator: OEM-12B
RF Match: Phase IV
Heater: Ceramic
Back side baratron: MKS 100T
Purge MFC: AR 2000
Lid Assembly: STD
Process baratron:
MKS 100T
MKS 1T
Chamber E: Single cool
Chamber F: Oriental
Robot: HP
Load lock: Wide body
Gas box: CI
No heat exchanger
Umbilical length:
CA Chamber A, B, C & D: 50 FT
Gas configuration:
Chamber A, B & D:
WF6 / 200
WF6 / 50
C2F6 / 500
AR / 3000
O2 / 1000
SiH4 / 300
H2 / 500
H2 / 2000
N2 / 300
Control rack:
Serial isolator
System reset
(2) Lk Det 1&2 / Conv/TC
No floppy disk drive
No hard disk drive
Chamber interfaces: A, B, D & E
Mainframe interface
Loadlock interface
Chamber A, B, D: DI/O 1&2
No chamber C: DI/O 1&2
Chamber E: DI/O
Synergy SBC
No controller, 486 V
No APC VME Seriplex PCB
SEI
Chamber A, B, D: AI/O
No chamber C AI/O
Mainframe AI/O
Chamber E/MF AI/O 2
(6) Mainframes DI/O
(3) Steppers
OMS.
AMAT / APPLIED MATERIALS Centura I is a compact, high-volume, high-performance chemical vapor deposition (CVD) reactor designed for single- or dual-chamber deposition of thin films of various materials. AMAT Centura I reactor is designed as a single-chamber equipment, with a closed, atmospheric-pressure reactor chamber. The system is powered by a powerful, variable-frequency induction heating unit, which is capable of achieving temperatures of up to 1,000°C. The metal vapor reactants are introduced into the reaction chamber through the top, while the substrates are loaded and unloaded from the front. APPLIED MATERIALS Centura I reactor is equipped with an RF generator, which provides a means of controlling the process in a variety of ways, including power control, temperature control, reactant flow rate control, and reactant mixture control. The enclosed deposition chamber is pressurized, permitting deposition of submicron thin films on a range of substrates, including metals and semiconductors. In addition, Centura I reactor features a variable-frequency power supply, permitting precise control of the process. AMAT / APPLIED MATERIALS Centura I reactor's enclosed deposition chamber is designed to minimize impurity exposure, offering improved film quality. The vacuum chamber is constructed from quartz, with an alumina liner, providing an inert atmosphere for the deposition process. The unit is finished in an extremely durable stainless steel, preventing contamination of the substrate, and is fitted with an optical window for monitoring the deposition process. AMAT Centura I is a cost-effective, high-performance CVD machine, which delivers reliable process control in deposition of high-quality thin films over a wide range of materials. The simple-to-operate tool is capable of consistently producing thin films with excellent durability and reliability, making it a popular choice for both prototyping and industrial production.
There are no reviews yet