Used AMAT / APPLIED MATERIALS Centura II IPS #115471 for sale
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ID: 115471
Vintage: 2001
Dielectric etcher
Install type: Stand Alone
CE Marked
Cassette Interface:
(2) Bolt-on Asyst LPT-2200
Centura II M / F
Robot: HP+ Extended Reach w/Single Blade (Ceramic)
Manual Lid Lift Assist
Load Locks:
Wide-Body w/ Auto-Rotation for cassettes
Enhanced wafer mapping (fast-detect)
Chambers:
Ch-E: Blank
Ch-F: Standard Orienter
Ch-A, B, C& D: IPS
ESC Pedestal with Helium Cooling
RF Generators: Astex Model 80-510-HP
Turbo: Leybold MAG2010C
Throttle Valve: NorCal
H.O.T. Endpoint
Chiller Dome: Bay Voltex LT-HRE
Chiller Cathode: Bay Voltex LT-HRE
Gas Box Config (Pallet modules):
Bottom Feed SLD Gas Panel
Bottom Exhaust w/ Vane switch
GP Controller: VME II
75 feet umbilicals
System controller:
66” IPS controller
Bottom Feed AC, top exhaust
30mA GFI
AC Rack:
Main AC Rack IPS Position AB
Secondary AC rack IPS Position CD
2001 vintage
As-is, where-is.
AMAT / APPLIED MATERIALS Centura II IPS reactor is a highly reliable, long-life ion implant equipment that is used in the semiconductor manufacturing process. It is designed specifically for p-type and n-type layers at higher temperatures, making it ideal for VLSI applications. The system uses a single beam configuration for precision ions implantation. It has minimal arcing even at higher beam energies and minimal sputter erosion to minimize contaminants. This allows the implantation of such thin layers for MOSFETs, DRAMs, and other very large integrated circuits. AMAT Centura II IPS reactor uses a precision high-voltage modulator to control the voltage, current, and timing of the ion beam. This unit helps prevent thermal impact which can cause device leakage. The higher temperatures allow for more efficient use of beam energy to achieve a given number of dopant atoms per process step. The full-containment vacuum chamber is large enough to allow for both vertical and horizontal depositions and provides superior interface integrity. The machine has a modular design that provides flexibility while maintaining a small footprint. The tool includes a superior beam forming optics package, sample holders and feedthroughs, and the ion source. The ion source uses advanced magnetics and extraction optics to maintain a stable beam profile and beam energy, ensuring the highest repeatability in the desired process density. The robust design of the asset also utilizes advanced interlocks and environmental control for safe operation. APPLIED MATERIALS Centura II IPS reactor features three standard power supplies that provide adjustable ion beam voltage, beam current, and beam pulse width to enable complex implants across wafer surfaces. The reactor can operate at up to 70 kV and has an adjustable beam current range from 0.1 mAmp up to 1 Amp. The model has an integrated temperature control equipment that can reach and maintain temperatures up to 530°C. This allows for dynamic control of the implanted species in order to achieve the desired results for aggressive implants and shallow junction depth profiles. Centura II IPS reactor is a highly advanced system that provides superior levels of performance and cost effectiveness. It is a reliable and cost-effective solution that is well-suited to meet the challenges facing semiconductor manufacturers. It is an excellent choice for ion implantation applications that require high accuracy and repeatability.
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