Used AMAT / APPLIED MATERIALS Centura II #9046133 for sale
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ID: 9046133
Wafer Size: 8"
Vintage: 2002
Etcher, 8", currently configured for 6"
Model: 5202
System type: Hybrid etcher 5202
Chamber types:
Chamber A DPS + Ploy
Chamber C Super E Oxide
Chamber D Super E Oxide
Chamber F orienter
Gas panel type: Centura II
Mainframe type: Centura II
Software revision: E4.5
(1) DPS silicon etch chamber
(2) Super-E dielectric oxide etch chambers
Applications:
STI etch, polysilicon gate etch, and spacer etch in DPS poly etch chamber
Contact and via etches in Super-E dielectric etch chambers
Plasma etching in both chambers
Super-E uses a single capacitively-coupled RF source
DPS poly chamber uses an inductively-coupled source for plasma generation and a capacitively-coupled source to control ion energy and directionality near the wafer surface
2002 vintage.
AMAT (APPLIED MATERIALS) AMAT / APPLIED MATERIALS Centura II is a chemical vapor deposition (CVD) reactor that is specifically designed for advanced thin film deposition. It is a 300mm production-class equipment that provides precision process control for high-volume thin film deposition. AMAT Centura II reactor is engineered for an optimal deposition of thin films for advanced logic and memory semiconductors. It combines the flexibility of open processing chambers with the throughput of high-efficiency systems. The primary components of APPLIED MATERIALS CENTURA-II reactor is a single-wafer or multiple-wafer carrier and a process chamber. The single-wafer carrier is designed to allow accurate alignment and rotation of the sample throughout the entire process cycle, while the multiple-wafer carrier is optimized for improved uniformity and throughput. The process chamber is the heart of the system, which is constructed with an optimized atmosphere for high rate deposition. The process chamber also consists of an electron beam evaporator (EBE) to ensure precise deposition of a volatile material onto the current wafer. Centura II reactor comes with a variety of features designed to improve process performance and efficiency. For example, it offers precision flow control and adjustable process parameters, which allow for accurate film deposition. Additionally, it has an advanced monitoring and control unit that is designed to provide real-time feedback and access to critical process parameters. Finally, it is equipped with a coordinate orientation machine, which enables precise alignment of films, enabling a high degree of uniformity. Overall, AMAT CENTURA-II is an integrated production-grade CVD reactor specifically designed for advanced thin film deposition. It offers precision process control, higher throughput and accurate film deposition, allowing for efficient, high-volume production of advanced devices.
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