Used AMAT / APPLIED MATERIALS Centura IPS #9204132 for sale

AMAT / APPLIED MATERIALS Centura IPS
ID: 9204132
Wafer Size: 8"
Vintage: 1999
Etchers, 8" (4) Chambers 1999 vintage.
AMAT / APPLIED MATERIALS Centura IPS is a single-wafer nano-scale device fabrication equipment designed for use in research, development and manufacturing of the most advanced semiconductor devices. The system is powered by a pulsed inductively coupled plasma (ICP) source that enables exceptionally low ion energy and rapid response time. The patented coaxial ion source provides the unique feature of fine control of the plasma sheath size and shape by controlling both the applied voltage and the pressure. Its computer-controlled operation offers comprehensive process control and makes AMAT Centura IPS suitable for a wide range of applications. The ICP source employs two coils with a top (inner) & bottom (outer) coil that can be energized with a sinusoidal waveform and synchronized by an adjustable phase shift. The ICP source generates a well-controlled pulsed plasma discharge in the presence of a flowing gas, thereby allowing well-controlled processing of materials into a desired state. The wafer tray is situated in a process chamber between the electrodes of the ICP source. A narrow beam of plasma energy is emitted from the ICP source, defines a series of process steps which occur in a repeatable cycle. This unit enables the etching and deposition of various materials, like silicon dioxide, silicon nitride, and polymers onto substrates of different sizes and shapes. APPLIED MATERIALS Centura IPS has two different processes, each with customizable parameters, to precisely deposit or etch reactive materials to the nanometer level. The etch process includes the same parameters as a lower-temperature deposited process with optional photoresist-stripping capability. Simple user setup and parameters allow for repeatable and fast process cycles. Centura IPS comes with an integrated Endpoint Monitor that allows accurate and repeatable monitoring of plasma processes and predetermined endpoint detection. By monitoring plasma parameters, the machine self-adjusts to ensure the intended substrate and process temperature range is maintained during deposition and etching. The integrated Endpoint Monitor also provides a cost-effective way to eliminate multiple measurement hurdles, since ion energy, ion flux angle, and other shifts in process parameters can be compensated for as needed. The tool also features a highly sensitive particle detection method designed to detect very low levels of particles on the substrate surface. This method allows for quick and easy process evaluation, optimization, and endpoint monitoring. The end result is precisely controlled batches of wafers with maximum uniformity, resulting in improved performance, product yield and lower cost. Furthermore, AMAT / APPLIED MATERIALS Centura IPS has a high throughput capability and can produce over 25 wafers per hour or 150 wafers in an 8-hour shift. Overall, AMAT Centura IPS is one of the most advanced single-wafer device fabrication systems with its patented coaxial ion source offering fine control of plasma sheath size and shape. This asset has excellent process control with its integrated Endpoint Monitor and user-friendly set-up, making it suitable for a wide array of applications. APPLIED MATERIALS Centura IPS is tough and reliable, with a high throughput capability, resulting in improved performance, product yield, and cost.
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