Used AMAT / APPLIED MATERIALS Centura MxP+ #166626 for sale
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ID: 166626
Wafer Size: 8"
Vintage: 1996
Oxide etch system, 8"
Install Type: Stand-Alone
Cassette Interface:
(Qty 2) Jenoptic InFab (SLR-200-LPTSL/R) Bolt-On SMIF
Wafer Shape: SNNF (Notch)
Centura (common) M/F:
Robot: HP
Robot Blade Type: Ceramic
Wafer on Blade Detect
Umbilicals :
Cntrl - M/F: 40ft
Pump - M/F Intfc: 50ft
RF PS - Chamber: 50ft
Water Leak/Smoke Detection
Facility Connections: M/F Rear
M/F Exhaust Line: 304SST
Status Lamp (RYG)
System AC / Controller:
Type: Phase 1
System SW: Legacy E3.8
Endpoint SW: ENDP28
GEMS / SECS Interface
GEMS SW ver.: OS2 E3.8
Load Locks:
Wide Body w/Auto-Rotation
25-Wafer Cassettes
Wafer Mapping
Chambers:
Position Chamber Type
E: Orienter (OA)
F: Orienter (OA)
A: MXP+ Oxide
B: MXP+ Oxide
C: MXP+ Oxide
D: MXP+ Oxide
Chamber E/F: Orienter (OA)
Lid Type: Hinged
Chamber A/B/C/D: MXP+
Lid Assy PN: 0010-36123 rev A
Lid Type: Screw/Bolt Down
Pedestal Type: Polyimide ESC
Process Kit: Quartz Single Ring
RF Match Type: Phase IV
Cathode Type: Simplified
Bias RF PS: ENI OEM-12B3
Endpoint Type: Monochromator
Throttling Valve + Gate Valve : Vat 65
Turbo Pump: Ebara ET300WS
Gas Box Config:
Vertical height: 31”
(Qty 10) Gas line positions per Pallet
Valve Type: Fujikin
Filter Type: Millipore
Transducer Type: SPAN
Controller Type: Standard
Facility Line Connection: Single Line Drop, Top Exhaust
Heat Exchanger / Chiller:
(Qty 2) Neslab 150
Fluid Type: 50 / 50
Power Requirements: V 208, 400A, 3-Phase, 4-Wire, 60Hz
1996 vintage.
AMAT / APPLIED MATERIALS Centura MxP+ is a deposition reactor designed for use in nanofabrication processes. It is equipped with a powerful microwave plasma source and utilizes hot organic-based chemical vapor deposition (CVD) technology to deposit thin films of molecules onto a substrate. The MxP+ is designed to be exceptionally reliable with a long lifetime, making it well-suited for critical production processes. The MxP+ is operated in a vacuum chamber. The microwave source supplies energy to create a plasma from the reaction gas, which is then directed to the substrate to cause CVD. Depending on the reaction gas, a wide range of materials can be deposited including metals, oxides, nitrides, and semiconductors. The reaction gas is flow-controlled to enable precise deposition of materials with precision thickness control. The MxP+ is equipped with a flexible wafer arm, which enable wafers up to six inches in diameter to be loaded and moved inside the chamber. It is a highly automated system, with a user-friendly interface that allows users to create and store processes. It can be operable within a range of temperatures, pressures, and power levels, so users can select the best parameters to achieve the desired results. Temperature is monitored and maintained within tight tolerances to ensure accurate deposition rates. The MxP+ is equipped with multiple safety features to protect users and the substrate being processed. The chamber is filled with a low pressure gas, which serves to reduce heat transfer between the wafer arm and the chamber walls. This helps prevent thermal damage to the substrate. The system also includes an automated dose control plus feature which regulates the amount of plasma that is generated by the microwave source to protect the chamber walls and reduce the potential for product contamination. The MxP+ is the ideal choice for research and production applications, delivering precision, reliability, and repeatability. It enables users to develop new deposition processes or optimize existing ones to improve performance. This high-performance deposition reactor offers an ideal solution for advanced nanofabrication applications.
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