Used AMAT / APPLIED MATERIALS Centura MxP+ #166626 for sale

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ID: 166626
Wafer Size: 8"
Vintage: 1996
Oxide etch system, 8" Install Type: Stand-Alone Cassette Interface: (Qty 2) Jenoptic InFab (SLR-200-LPTSL/R) Bolt-On SMIF Wafer Shape: SNNF (Notch) Centura (common) M/F: Robot: HP Robot Blade Type: Ceramic Wafer on Blade Detect Umbilicals : Cntrl - M/F: 40ft Pump - M/F Intfc: 50ft RF PS - Chamber: 50ft Water Leak/Smoke Detection Facility Connections: M/F Rear M/F Exhaust Line: 304SST Status Lamp (RYG) System AC / Controller: Type: Phase 1 System SW: Legacy E3.8 Endpoint SW: ENDP28 GEMS / SECS Interface GEMS SW ver.: OS2 E3.8 Load Locks: Wide Body w/Auto-Rotation 25-Wafer Cassettes Wafer Mapping Chambers: Position Chamber Type E: Orienter (OA) F: Orienter (OA) A: MXP+ Oxide B: MXP+ Oxide C: MXP+ Oxide D: MXP+ Oxide Chamber E/F: Orienter (OA) Lid Type: Hinged Chamber A/B/C/D: MXP+ Lid Assy PN: 0010-36123 rev A Lid Type: Screw/Bolt Down Pedestal Type: Polyimide ESC Process Kit: Quartz Single Ring RF Match Type: Phase IV Cathode Type: Simplified Bias RF PS: ENI OEM-12B3 Endpoint Type: Monochromator Throttling Valve + Gate Valve : Vat 65 Turbo Pump: Ebara ET300WS Gas Box Config: Vertical height: 31” (Qty 10) Gas line positions per Pallet Valve Type: Fujikin Filter Type: Millipore Transducer Type: SPAN Controller Type: Standard Facility Line Connection: Single Line Drop, Top Exhaust Heat Exchanger / Chiller: (Qty 2) Neslab 150 Fluid Type: 50 / 50 Power Requirements: V 208, 400A, 3-Phase, 4-Wire, 60Hz 1996 vintage.
AMAT / APPLIED MATERIALS Centura MxP+ is a deposition reactor designed for use in nanofabrication processes. It is equipped with a powerful microwave plasma source and utilizes hot organic-based chemical vapor deposition (CVD) technology to deposit thin films of molecules onto a substrate. The MxP+ is designed to be exceptionally reliable with a long lifetime, making it well-suited for critical production processes. The MxP+ is operated in a vacuum chamber. The microwave source supplies energy to create a plasma from the reaction gas, which is then directed to the substrate to cause CVD. Depending on the reaction gas, a wide range of materials can be deposited including metals, oxides, nitrides, and semiconductors. The reaction gas is flow-controlled to enable precise deposition of materials with precision thickness control. The MxP+ is equipped with a flexible wafer arm, which enable wafers up to six inches in diameter to be loaded and moved inside the chamber. It is a highly automated system, with a user-friendly interface that allows users to create and store processes. It can be operable within a range of temperatures, pressures, and power levels, so users can select the best parameters to achieve the desired results. Temperature is monitored and maintained within tight tolerances to ensure accurate deposition rates. The MxP+ is equipped with multiple safety features to protect users and the substrate being processed. The chamber is filled with a low pressure gas, which serves to reduce heat transfer between the wafer arm and the chamber walls. This helps prevent thermal damage to the substrate. The system also includes an automated dose control plus feature which regulates the amount of plasma that is generated by the microwave source to protect the chamber walls and reduce the potential for product contamination. The MxP+ is the ideal choice for research and production applications, delivering precision, reliability, and repeatability. It enables users to develop new deposition processes or optimize existing ones to improve performance. This high-performance deposition reactor offers an ideal solution for advanced nanofabrication applications.
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