Used AMAT / APPLIED MATERIALS Centura RTP XE #9204530 for sale

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ID: 9204530
Wafer Size: 8"
Vintage: 2000
Etcher, 8" Wafer specification: Wafer shape: SNNF SMIF Interface: No System information: Loadlock type: Wide body Hard drive: Yes (10) System umbilical Signal tower: (3) Colors (8) Wafer sensors Jem: No OTF: No Chamber A: Mod2, XE RTP Process: ISSG Temp probe: SEKIDNKO Manometer model: 1000 Torn: 624A13TBC 100 Torn: 624A12TBC MKS Chamber B: Mod2, XE RTP Process: ISSG Temp probe: SEKIDNKO Manometer model: 1000 Torn 624A13TBC 100 Torn 624A12TBC MKS Chamber E: Cooldown Throttle valve: M 253B-1-40-1 Chamber F: Cooldown Throttle valve: M 253B-1-40-1 P/N: 0190-35452 System monitor: 1st Monitor: Through the wall 2nd Monitor: Stand alone 3rd Monitor: Through the wall Mainframe information: System placement: TTW Robot typs: HP L/L Wafer mapping: WWM Robot blade: Qtz blade W/F Slippage sensor: Yes N2 Purge: Yes Gas pallet configuration: Valves: FUJI kin 5 ra max Filters: Nasclean Transducers: MKS Wl Display Regulators: AD TECHNOLOGY Single line drop(SLD): Yes SLD Gas lines fees: Top feed System cabinet exhaust: Top Electrical: Line frequency: 60 Hz System power: 206 VAC, 320 A UPS Power: 208 VAC, 20 A 2000 vintage.
AMAT / APPLIED MATERIALS Centura RTP XE is an epitaxial reactor designed for semiconductor wafer processing. It is equipped with a multi-zone heated wafer susceptor and provides production-grade uniformity and advanced temperature control. It also features a high-efficiency, high-speed turret drive for fast and accurate wafer placement and removal. The reactor has a load-lock equipment for convenient wafer loading and unloading, an internally cooled graphite polysilicon liner to provide a smooth, uniform thermal environment, and an advanced controller for real-time temperature adjustment and monitoring. AMAT Centura RTP XE has a uniform preheat zone temperature and an accurate substrate temperature monitoring system to ensure consistent results throughout the process. The reactor also features a pressure-balanced isolation valve and a multi-stage thermal cycle for precise temp control. This enables the unit to perform epitaxial processes with an extremely high degree of control and accuracy. The machine also offers an array of process options, such as the ability to control the temperature ramp to achieve selective epitaxy, adjust the wafer temperature during processing to improve etch rate uniformity, and optimize wafer heating and cooling times to reduce stress levels. Additionally, an advanced controller / computer interface allows for automated process control and data logging to increase efficiency and repeatability of the epitaxial process. The reactor is also equipped with an in-situ cleaning tool which utilizes automated cleaning cycles with a variety of substrate treatments to reduce the risk of contamination and yield losses. APPLIED MATERIALS Centura RTP XE also comes with a built-in mass flow controller for precise an atmospheric control, and a built-in oxygen analyzer that monitors the process gas composition. Overall, Centura RTP XE is an epitaxial reactor designed for advanced semiconductor wafer processing and provides highly accurate temperature control. Its high-efficiency turret drive, pressure-balanced isolation valve, advanced controller, and in-situ cleaning asset ensure a precise, repeatable process with minimal contamination and yield losses.
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