Used AMAT / APPLIED MATERIALS Centura Tectra #195738 for sale

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AMAT / APPLIED MATERIALS Centura Tectra
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ID: 195738
Wafer Size: 8"
Vintage: 2001
CVD System, 8" (3) chambers: TiCl4 Ti TiN RP SMIF type LTP 2200 Software version C6.22B Chamber A: Heater out of order Chamber D: Turbo out of order 2001 vintage.
AMAT / APPLIED MATERIALS Centura Tectra is a dedicated reactor for advanced chemical-mechanical planarization (CMP) to achieve advanced level planarization of etched wafers in conjunction with other process steps. The Integra-CMP approach combines conventional chemical-mechanical polish of etch residue, and deposition of a thin CMP-resistant film to create a low-wear CMP surface. AMAT Centura Tectra is capable of a variety of CMP configurations and process recipes, where each configuration can be built and tuned to match the specific technology, material, and tool type. The Tectra provides the industry-leading feature set for controlling processes, fabricating and evaluating results, and managing data. It enables active polishing control, with the ability to directly control polishing conditions and optimize quality and throughput. APPLIED MATERIALS Centura Tectra also provides a comprehensive set of features for CMP processing including a cavitation-resistant pressure chamber, floating polishing head, segmented polishing pad, and positioning diagnostics. The pressure chamber is designed to prevent the formation of air pockets within the chamber, which can result in uneven polishing across the wafer surface. The floating polishing head is engineered to reduce the amount of vibration created by the CMP process and create a uniform planarization across the target surface. In addition, the segmented polishing pad offers fine control over the motion of the polishing head, ensuring an even distribution of pressure and uniform planarization. Centura Tectra is designed to allow for precision tuning of the CMP process to achieve the desired planarization of the target surface. This includes the automated adjustment of rotation speed, pressure, and the number of passes of the polishing head on the target surface. In addition, this CMP system offers the ability to adjust for edge effects and ensure accurate placement of the polishing pad on the wafer surface for repeatable and reproducible results. Furthermore, the combination of features in the Tectra allows users to confidently create aggressive CMP processes that allow for maximum planarization in the fastest processing time. Finally, AMAT / APPLIED MATERIALS Centura Tectra offers an intuitive user interface with automated data collection to allow for thorough monitoring of the CMP process. This includes the ability to track parameters such as wafer speed, wafer size, and the pressure applied to the polishing pad. This feature set allows users to fine tune their CMP process to precisely match the desired level of planarization for their specific application.
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