Used AMAT / APPLIED MATERIALS Centura TPCC #293749953 for sale

ID: 293749953
Wafer Size: 8"
Vintage: 2000
System, 8" Process: ISSG / DPN SMIF Chamber A (DPN): Material: Al-Si Coating RF Generator with power supply: 13.6 MHz, 20-1000 W Manometer MKS: 13.3 / 1333 Pa Manometer Torr: 1 / 10 Wafer cooling: He ESC Wafer holding Ground VDE BOC EDWARDS / SEIKO SEIKI STP-A1603C Turbo pump: 1600 Litres/sec No RGA Port N2 MFC Size: 1slm Chamber B (ISSG): Toxic chamber with exhaust: CHEMRAZ O-Ring No RGA No ISPM No oxygen analyzer Process capability: Gasses: O2, Ar, He, N2, H2 Oxidation capability GPM Controller ISSG / RPN No remote plasma Chamber purge option: 0021-35008 Reflector plate 0200-36118 Edge ring, Si-C 0200-03425 Wafer cylinder No reflector plate Gas pallet: O2 MFC: 5 / 20 slm Ar / He MFC N2: 1 MFC, 20 slm H2: 3 MFC, 1 slm / 10 slm Load lock / cassette: (2) Chambers Wide body Universal cassette platform Fast wafer mapping Light tower: Red, yellow, green Heat exchanger: Steelhead-3 (PM1) 2000 vintage.
AMAT / APPLIED MATERIALS Centura TPCC (Thermal Processing & Chemical Chemical Vapor Deposition Reactor) is a highly advanced deposition equipment that is used for the production of thin film materials. This system is comprised of a reaction chamber,the material supply, deposition stage, vacuum pump, and a control unit. The reaction chamber is a cylindrical chamber with a heated susceptor in the middle. The susceptor is used to maintain a uniform temperature throughout the chamber and consists of a refractory covered base plate with an array of heating elements. It can be heated up to 1000°C and the walls are kept insulated to ensure the temperature is uniform. The material supply machine consists of a number of reactors, furnaces, and crucibles which are used to feed material into the reactor chamber. The feed material can be in the form of powders, granules, or other particle form. These materials are heated, vaporized, and then injected into the reaction chamber, where a chemical reaction occurs between the materials and the heated reaction gases. The deposition stage is a crucial component of the tool and consists of an arrangement of quartz-crystal windows, which allow the deposition of a thin film on a substrate. The substrate is placed in a target position and the depositing gas is injected onto the substrate via the quartz windows. The substrate is then heated and the thin film is grown on it. The vacuum pump of the asset operates at a low pressure to allow for the deposition of thin film materials and reduce the risk of particles on the substrate. The vacuum also prevents oxidation of the materials and provides a medium in which it can travel from one reaction chamber to another. Lastly, the model includes a control equipment to manage the temperature, power, and other factors that affect the deposition process. The control system also monitors the progress of the reaction and allows for adjustments to be made as needed to ensure that the desired film thickness is obtained. In conclusion, AMAT Centura TPCC is a highly advanced deposition unit designed to facilitate the production of a variety of thin film materials. It consists of a reaction chamber, material supply, deposition stage, vacuum pump, and a control machine, which work together to provide efficient and accurate deposition of a thin film on a substrate.
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