Used AMAT / APPLIED MATERIALS Centura Ultima HDP CVD #62203 for sale
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ID: 62203
Wafer Size: 8"
Vintage: 2000
Etcher, 8"
(2) Ultima chamber
(1) Ultima plus chamber
Technology :IMD
Wafer Size : 8"
Wafer Shape : SNNF (Semi Notch No Flat)
Software Version : B4.3.14
CHAMBER TYPE AND LOCATION
Ch A : Ultima HDP-CVD
Ch B : Ultima HDP-CVD
Ch C : Ultima + HDP-CVD
Ch E : Multislot Cool Down
Ch F : Orientor
CHAMBER A,B Ultima HDP-CVD :
Nozzle : Long/Long Side
Clean Gas Distribution : Baffle
Turbo Pump : Ebara ET1600WS w/ HVA
Wafer Temperature Monitoring : Yes
Top Gas Feed : Without Top O2
Dual Independent He Control : Standard 10/10 TORR
Clean Method : Microwave
CHAMBER C - Ultima + HDP-CVD :
Nozzle : Long/Long Side
Clean Gas Distribution : Baffle
Turbo Pump : Ebara ET1600WS w/ HVA
Wafer Temperature Monitoring : Yes
Top Gas Feed : Without Top O2
Dual Independent He Control : Standard 10/10 TORR
Clean Method : Top Mount
EXISTING ELECTRICAL REQUIREMENTS
Line Frequency : 60Hz
Line Voltage : 200/208V
Line Amperage : 600A Platform
EXISTING SAFETY EQUIPMENT :
EMO type : Turn to release EMO
EMO Guard Ring : Yes
System Labels : English w/Chinese Non-simplified
System Smoke Detector : Controller
EXISTING MAINFRAME :
Mainframe Type : Ultima HDP w/Multislot
Frame Type : Standard Frame
System Placement : Through the Wall
Mainframe Skins : No
Mainframe Exhaust Duct : No
Mainframe Facilities Connection : Back
Robot Type : HP Robot
Robot Blade : Ceramic
Loadlock Cassette : Narrow Body
Narrow body Loadlocks : Cassette Present Sensor
Loadlock Wafer Mapping : Basic
N2 Purge Type : STEC 4400MC 10 Ra Max
EXISTING GAS DELIVERY :
Gas Panel Surface Finish : Standard Gas Panel
MFC Type : STEC 4400MC 10 Ra Max
Valves : Fujikin 5 Ra Max
Filters : Pall Ni 10 Ra Max
Transducers : MKS w/ Display
Regulators : Veriflo
System Cabinet Exhaust : Top
Gas Panel Gas/Flow Direction Labels : Yes
APC Seriplex Cover : Yes
Gas Panel Doors : Solid
Gas Pallet Configuration :
Chamber A, B, C
Gas Stick/Process Gas/MFC size/Regulator/Transducer
#1 SiF4 100 Y Y
#2 O2 400 Y Y
#3 SiH4 200 Y Y
#4 Ar 300 Y Y
#5 SiH4 20 Y Y
#6 Ar 50 Y Y
#7 NF3 2000 Y Y
#8 Ar 2000 Y Y
REMOTES :
RF Generator Rack - Ultima Gen. Rack
ASTEX 80S09mW (3)
Quantity : Two
Ultima Stand-Alone RF Generator Rack : Yes
Generator Rack Cooling - RF Gen Rack Manifold with Quick Disconnect Ultima Gen Rack H20 Connection - Barbed Brass
Existing Heat Exchanger : SMC Thermo
Umbilicals :
System Controller Signal Cable Length : 55ft
RF Gen Rack Cable Length : 50ft
Ultima Stand-Alone Generator Rack : 98 ft
HX Hose Length : 50ft
HX Cable Length : 50ft
Pump Cable : 50ft
Ultima Microwave Generator Cable Length : 50 ft
Ultima WTM Cable Length : 32.8 ft (10m)
Vacuum Pumps, Exhaust Scrubber not included in sale
Currently crated and stored
System Can be inspected
1999-2000 vintage.
AMAT / APPLIED MATERIALS Centura Ultima HDP CVD is a chemical vapor deposition (CVD) reactor with a proprietary Hot-Wall-Delivery-Plasma (HWDP) processing chamber. This reactor is specifically designed to facilitate chemical vapor deposition of a range of materials with optimized thermal and plasma uniformity. The reactor uses chemical precursors to create layers of material on substrates such as metal, silicon, or ceramic. With the ability to produce incredibly thin, conformal layers of high-density plasma-assisted deposition (HDP), this reactor is an ideal tool for applications ranging from semiconductor packaging and advanced interconnects to biomedical and nanotechnology-related applications. AMAT Centura Ultima HDP CVD reactor is designed to provide maximum uniformity and repeatability during the CVD process. The design of the HWDP processing chamber allows for precise evaporation of precursors which are converted into a plasma state upon contact with the hot plasma source. This plasma source has a high degree of uniformity, providing the resulting coating with a consistent layer thickness throughout the substrate. Additionally, the HWDP chamber design eliminates the need for cooling, allowing for higher temperature control for improved layer density. The use of temperature sensors throughout the chamber also allows for precise temperature control for improved layer uniformity and property control. APPLIED MATERIALS Centura Ultima HDP CVD reactor is also designed to promote high throughput performance. The processing chamber is designed to operate at low pressure, allowing for high flow rates of precursor and process control gases. This high throughput can be leveraged to maximize the production volume and yield while maintaining the highest levels of process and quality control. Centura Ultima HDP CVD is an excellent tool for a variety of CVD applications. From creating high density layers for semiconductor packaging to biomedical materials and nanotechnology, this reactor has features engineered to facilitate the deposition of coatings with improved uniformity and repeatability. This reactor is ideal for applications requiring precise control of layer thickness, temperature, and uniformity, enabling the deposition of HDP layers for the most advanced technology.
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