Used AMAT / APPLIED MATERIALS CENTURA #116340 for sale

AMAT / APPLIED MATERIALS CENTURA is a type of etch/etchback dry-etch reactor designed for photomask fabrication. It is designed to provide high etching rate, narrow trench and metal line shape, good profile control, and high throughput capabilities. The system incorporates an advanced wafer handling, substrate pre-cleaning, etching, and post-cleaning methods. The wafer is first mounted on a cassette belt, which is then inserted into the processing chamber. The chamber is equipped with gas and temperature control to provide optimal process conditions. Once the valve is closed and the process is initiated, the power is applied and the plasma etch is generated. During the etch process, an etchback head is used to keep the trench or metal line width and shape in control. The plasma etching process for patterning photomasks and layers of semiconductor devices uses the gas-mixture, pressure, and power to lift the pattern from the wafer. The first step is to pre-clean the wafer surface before the etch processing. The pre-cleaning may include removing residues from the previous process, removing surface particles, and adjusting the surface roughness. AMAT CENTURA uses Open-Loop Active Flow Control (FLOC) for precise etch rate control, to reduce over-etching, and to maintain the precise target dimensions. This system also supports high throughput, precise shape and size control of metal lines, and high etch rate. The process parameters are monitored and controlled in real-time to provide precise process performance. The result is uniform etch results, straighter lines, and improved profile control. The post-etching cleaning process (including different chemical baths and scrubbing steps) can remove any residues and scratches that occurred while the etching process. The post-processing step allows the parts to pass qualitative tests and be ready for the next processing steps. In summary, APPLIED MATERIALS CENTURA is an advanced etch/etchback dry-etch reactor designed for fabrication of photomasks and layers of semiconductor devices. It provides precise etch rate control, high throughput capabilities, and precise shape and size control of metal lines for improved yield and process efficiency. The system's pre-clean, etching, and post-cleaning steps ensure uniform etching results and improved profile control.