Used AMAT / APPLIED MATERIALS CIP WPVD Chamber for Endura II #293666954 for sale

AMAT / APPLIED MATERIALS CIP WPVD Chamber for Endura II is a reactor chamber designed to provide Chemical-Ion-Plasma Vapor Deposition (CIP WPVD) for highly uniform and repeatable advanced thin film deposition for the semiconductor market. The CIP WPVD chamber is engineered to provide a precisely controlled environment to enable a uniform deposition of thin films on various substrates. The chamber features a cylindrical housing with four quartz heat-shielded windows allowing observation of the chamber interior and enabling uniform deposition of thin films. The CIP WPVD chamber includes various instrumentation such as temperature, pressure and flow rate sensors. The CIP WPVD chamber is used for depositing various thin film materials over wide ranges of temperature, pressure and RF power. It has a capacity of up to 3500°C and a vacuum rate of 10-8 to 10-10 of torr. The chamber includes an RF generator and coil arrangement for volumetric RF field emission of electrons with a uniform high-density plasma. This arrangement ensures uniform deposition of thin film in the chamber by balancing the radial density of the plasma to maintain optimum deposition rate. The CIP WPVD chamber also includes a Gaseous Reactive Chemistry (GRC) capability to enable additional customized functionality for enhanced thin film deposition performance. In addition, it includes a modular expandable system to easily upgrade the chamber with an increased number of gas sources, IF and IP sockets. The CIP WPVD chamber has a robust design to enable ease of operation and maintainability. It features a touch-screen based controller, an integrated PC for process control, and a set of configurable ports that allows connecting to process and calibration instruments. The chamber has built-in hardware monitoring capability that provide real-time process data for easy parameter setting and monitoring of chamber performance. The CIP WPVD chamber is designed to provide precise conformal coating on various substrates and features a unique process flow that enable superior thin film deposition. The chamber is suitable for 500mm and 300mm wafers and can be used for processes such as etching, deposition of high-k dielectrics, and MEMS and thin film nanowire deposition. The chamber provides superior performance for high pin count applications and is suitable for the development of new thin films and MEMS.