Used AMAT / APPLIED MATERIALS Endura 5500 #9096874 for sale

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ID: 9096874
Wafer Size: 8"
System, 8" Process: Al/Ti and TiN (4) Chambers: (2) Process chambers Signal tower: 3-color Loadlock type: Nallow Auto Buffer robot: HP Buffer robot blade: std Transfer robot: HP+ Transfer robot: std VHP Robot Chamber A: PASS Chamber B: Cool Down Chamber E: Orienter Degas Chamber F: Orienter Degas Chamber 1: Al process Body: std Source lid: 8" STD Magnet: 0010-20225 Heater: Heater Shutter: n/a Cryo pump Gate valve: 2-position RF/DC Gen1: MDX-L12M RF/DC Gen2: MDX-L12 Gas N2: 100 SEC 4400 MC Gas N2: 20 SEC 4400 M Chamber 2: TI process Body: Wide Source lid: 8" STD Magnet: 0010-20223 Heater: 101% Shutter: Yes Cryo pump Gate valve: 2-position RF/DC Gen1: MDX-L12M Gas N2: 200 SEC 4400 M Gas N2: 200 SEC 4400 M Gas N2: 20 SEC 4400 M Chamber 3: TI process Body: Wide Source lid: 8" STD Magnet: 0010-20223 Heater: 101% Shutter: Yes Cryo pump Gate valve: 2-position RF/DC Gen1: MDX-L12M Gas N2: 100 SEC 4400 M Gas N2: 200 SEC 4400 M Chamber 4: TI process Body: std Source lid: 8" STD Magnet: 0010-20258 Heater: Heater Shutter: N/A Cryo pump Gate valve: Cryo RF/DC Gen1: MDX-L12M Gas N2: 20 SEC 4400 M Gas N2: 100 SEC 4400 M Pump L/L A30W System: Leybold WSU151/D25BCS Cyro comp: 9600 Cyro pump: on board.
AMAT / APPLIED MATERIALS / AKT Endura 5500 is a multi-chamber batch processing reactor designed for creating thin films on semiconductor wafers or photovoltaic cells. AKT Endura 5500 has a standard configuration of five separate process chambers, each with its own unique set of controllable parameters to regulate temperature, pressure, gas flow, programmable timer and safety interlocks. Each chamber can be tailored to the specific process being run. The batch size of AMAT ENDURA 5500 can be up to 11.5 inches (29 cm) in diameter, and the chambers have a total volume of up to 3.8 cubic feet (109.47 liters). ENDURA 5500 is designed primarily for reactive ion etching (RIE) processes, but can also be used for other thin film processing such as sputtering, Physical Vapor Deposition (PVD) and chemical vapor deposition (CVD). The process chambers can be loaded with reactant gases in order to carry out etching processes such as oxide etching, silicon nitride etching, phosphorous silicate glass etching, and low-pressure polysilicon etching. Additionally, Endura 5500 can be used for deposition processes such as oxides, nitrides, and photoresists. The primary power source for AMAT Endura 5500 is three-phase AC electricity. Several environmental and safety features are built into the reactor to limit exposures to hazardous gases. APPLIED MATERIALS ENDURA 5500 has an adjustable purge cycle along with a scrubber equipment and a vacuum system to keep the process chamber clean and safe. It features an emergency shut-off switch and an inert gas back flush unit to control any fires during processing. APPLIED MATERIALS Endura 5500 is designed for a wide variety of process recipes and has the ability to precisely control the time, temperature, pressure, vacuum, gas flow, and other controllable parameters. The reactor can be operated manually or through a closed-loop feedback machine under programmable control. The flexible, user-friendly software enables users to optimize the process parameters to achieve the desired results. AMAT / APPLIED MATERIALS / AKT ENDURA 5500 is capable of handling intricate semiconductor device geometries, including higher aspect ratios and deep-trench structures. Its modular design allows easy access for operators to troubleshoot and calibrate the reactor. In addition, its fully automated control tool facility allows users to create and store process recipes, optimize process parameters, and easily replicate results.
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