Used AMAT / APPLIED MATERIALS Endura CL #9281524 for sale
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AMAT/AMAT / APPLIED MATERIALS Endura CL Reactor is a highly advanced cluster tool specifically designed for advanced microelectronic device fabrication. This reactor utilizes a scalable cluster system, providing customers with flexibility and upgradability for increased device performance. AMAT Endura CL Reactor employs a series of great features such as the Sub-Stride Chamber (SSC) Technology, which allows for drastic reductions in wafer-to-wafer loading errors. This technology is based on the use of a low-cost, low-maintenance, low-static-capacity chamber filling process. APPLIED MATERIALS Endura CL Reactor also utilizes Programmed Deposition (PD) feature. This feature ensures uniform deposition of specific layers and allows for both a monolayer and digitized deposition of up to four layers. This allows for faster, more accurate depositions. Endura CL Reactor also offers a unique Plasma Edge Isolation (PEI) Technology feature for improved device performance. This feature helps minimize device leakage, increases etch rates, and renders a smoother deposition. Additionally, this reactor is equipped with advanced in-situ endpointing (EP) and film quality sensing (FQS) capabilities for optimal, real-time etch and dep results. AMAT / APPLIED MATERIALS Endura CL Reactor is also designed for industry-leading process uniformity and robust process control. This is achieved by using an interlocked, dynamic four-zone gap track heater and in-situ endpoint detection, which permits precise dose and temperature control. AMAT Endura CL Reactor is also built with an industry-leading wafer-handling system to support high throughput, quick access, low contamination, and easy maintenance. The reactor is designed to offer a rapid cool-down and warm-up time, allowing fast substrate changeover and excellent wafer-to-wafer throughput. APPLIED MATERIALS Endura CL Reactor delivers optimum performance and energy efficiency for advanced microelectronics fabrication. The integrated features of this reactor combined with high-level process control capabilities allows for the most reliable and efficient fabrication of submicron-level microchips and other complicated device structures.
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