Used AMAT / APPLIED MATERIALS Endura II #293815270 for sale

AMAT / APPLIED MATERIALS Endura II
ID: 293815270
Wafer Size: 12"
Physical Vapor Deposition (PVD) System, 12".
AMAT / APPLIED MATERIALS / AKT Endura II is an advanced plasma-enhanced chemical vapor deposition (PECVD) reactor. It is designed for deposition of advanced dielectric thin films, including high-k and low-k materials. AKT Endura II provides high-level performance through its combination of direct-drive showerhead, advanced multi-point control, and advanced containment systems. AMAT Endura II features a high-accuracy direct-drive showerhead, which can achieve uniform deposition across large sample surfaces. It also features a multi-point control system, which can precisely control deposition at multiple points, resulting in uniform deposition profiles. Additionally, APPLIED MATERIALS Endura II's advanced containment system offers excellent emission control, providing superior environmental protection. Endura II is capable of performing deposition in both vacuum and over pressure mode, allowing for the deposition of a wide range of materials. Its deposition capabilities include both high-k dielectrics and low-k materials, enabling users to deposit a variety of complex films. The reactor is also capable of performing high-rate deposition, with the ability to provide up to 80 nm deposition rate of copper. In addition, AMAT / APPLIED MATERIALS / AKT Endura II offers excellent process control. AKT Endura II uses a high-accuracy mass flow controller (MFC) system to precisely control flow and ensure precise process control. Additionally, the reactor is outfitted with an integrated RF generator, which can be used to control the plasma parameters during PECVD deposition. AMAT Endura II is also highly compatible with the company's process control software. This software provides users with detailed process monitoring and control, allowing for complete control over the reactor's deposition parameters. APPLIED MATERIALS Endura II is an advanced PECVD reactor designed to offer precise deposition of high-k and low-k dielectrics. The reactor's direct-drive showerhead, advanced multi-point control, and advanced containment systems are all designed to provide superior deposition profiles and environmental protection. The reactor is capable of performing high-rate deposition, as well as performing in both vacuum and overpressure mode. Additionally, its integrated RF generator and process control software offer precise process monitoring and control.
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