Used AMAT / APPLIED MATERIALS Endura II #9090977 for sale
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ID: 9090977
Wafer Size: 12"
Vintage: 2013
Advanced low pressure source (ALPS) ESI chamber, 12"
Process: CO and Ni PVD deposition
High aspect ratio
Extendable for <90 nm technology node
Super low temp FDR E−Chuck
DI Cooler heat exchanger
(2) Cons kit: ALPS ESI with SLT FDR ESC/HSESC
Deposition rate: >400 A/min
RS Non-uniformity, within wafers: <4%; 1 sigma, 49 points, 3 mm edge exclusion
RS Non-uniformity, between wafers: <2%, 1 sigma, 25 wafers
Stress: <1e10 Dynes/cm²
Resistivity: <18 at 150A
Magnet P/N: 0415-24050
ESC P/N: 0415-23875
Di Cooler heat exchanger P/N: 0415-27326
Consumable kit P/N: 0415-29257
All cables are included
Process chamber options:
ALPS ESI
Super low temperature FDR E-chuck
Remote options:
System head exchanger:
Additional Di cooler heat exchanger
Additional options:
PVD Consumables:
Cons kit - ALPS ESI
With SLT FDR ESC / HSESC
(3) CV Chambers
Working hours: Processed ~200 wafers
2013 vintage.
AMAT / APPLIED MATERIALS / AKT Endura II reactor is a high-performance plasma etch equipment built specifically to meet the needs of semiconductor device manufacturing. The system is designed to provide optimum process performance levels with minimal downtime and cost of ownership. AKT Endura II features the revolutionary combination of a low-diurnal source, low-thermal source, and a high-temperature source region, enabling the unit to accommodate a wide range of etch processes. The machine is also designed with a special one-way valve for convenience and safety, so that exhaust can safely be released via the exhaust port. AMAT Endura II reactor operates with advanced, proprietary ProTec™ process control software. This allows for rapid set up of the process parameters. It also gives the user the ability to monitor processes in real-time, view historical metrics and data, and edit parameters as needed for more precise etching results. The ProTec software also enables the user to customize the process configuration to optimize their yield. The tool utilizes a broad range of etch gases, including fluorine and chlorine-based chemistries. This makes it possible to achieve high-quality etching with excellent feature shapes, selectivity, uniformity, and acceptable profiles. APPLIED MATERIALS Endura II also features advanced automation capabilities, providing process control, diagnostic, and recipe generation options to enable efficient and repeatable production etch processes. The asset also includes an integrated, in-situ gas delivery model with dual gas control and six gas inlet points for increased process gas stability. This ensures consistent gas mixing and uniform device performance for the entire production run. Furthermore, the equipment utilizes a specially designed process-enhanced capacitance-voltage monitor to accurately measure substrate temperature during the etch process. Endura II reactor is designed to be a reliable and reliable process execution platform, ensuring high yields and optimal process performance in high-volume etch environments. This system is an attractive choice for semiconductor device manufacturers that require outstanding performance, high precision, and minimal downtime and cost of ownership.
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