Used AMAT / APPLIED MATERIALS Endura II #9161793 for sale

AMAT / APPLIED MATERIALS / AKT Endura II Reactor is a full-field ion implantation installation developed to deliver unmatched performance for microelectronics production. AKT Endura II Reactor provides superior performance for Strained Layer SUPERLATTICE (SLS) devices and Low Voltage Junction Field Effect Transistor (LVJFET) devices. This equipment is designed to offer the highest ion energy and fluence uniformity for deposition of nitrogen and arsenic. AMAT Endura II Reactor's chamber consists of a graphite-type cathode and aluminium anode system. This combination of materials improves thermal stability, provides high resistivity, and minimizes sputtering. The gas diffusion unit used for the ion source is designed to eliminate contamination from other gases and offer a consistent, homogeneous source of gas. Additionally, the cathode heating machine is designed to minimize temperature fluctuations, ensuring the presence of low energy electrons for improved radicalization of the ions. For enhanced throughput and extended target lifetime, APPLIED MATERIALS Endura II Reactor features high-temperature lattice optics, designed to reduce electron and particle imaging distortions and improve the quality of the plasma ion beam profile. It also has an automated gas fluctuation tool with an alignment neck to reduce ion beam shifted due to changes in filament position. This asset is designed to maintain an even beam distribution over the target, enabling optimal uniformity of implant area coverage. Endura II Reactor also features a high-resolution backscatter measurement technique in the model to calculate dosage accurately, reducing the risk of device failure. AMAT / APPLIED MATERIALS / AKT Endura II Reactor also features robust equipment controls and monitoring systems, allowing technicians to accurately track and control the implantation parameters. This includes a bypass system for strict control of gas flows, along with an integrated high-voltage control module for precise control of acceleration voltage, and an integrated scan control module that collaborates with the in-strsystems to accurately control the scan speed and pulse stops. AKT Endura II Reactor is an advanced ion implantation installation designed for high-performance microelectronics production. This unit features robust materials and comprehensive machine controls to guarantee uniform distribution of ions over the target, as well as isolated gas diffusion systems for consistent ion beam profiles. This enables the tool to deliver superior performance for the manufacture of SLS and LVJFET devices.