Used AMAT / APPLIED MATERIALS Endura II #9195497 for sale
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ID: 9195497
PVD System
(4) Chambers
Process type: HT DSTTN
Chamber position: 1,2
Shutter option
Chamber body: SST
Chamber body part number: 0040-98657
Slit valve seal: Bonded
Slit valve door part number: 0040-84391
Target vendor: NIKKO
Target number: TAG72
DC Power supply (AE-MDX): ENI
APPLIED MATERIALS Part number master: 0190-22931
OEM Part number master: DCG200Z
Generator size: 20 kW
Total DC (12 kWh,24 kWh): 20 kW
Magnet rotation speed: 95 RPM
Magnet shim thickness: No data
Magnet type: TI / TIN
Magnet part number: 0010-03487
Magnet spacing: 1.0 mm
Adapter part number: 0040-69768
Upper shield part number: 0021-21234
Treatment: Bead blast
Lower shield part number: 0020-29706
Treatment: Bead blast
Dep ring part number: 0200-01080
Cover ring part number: 0021-22177
Treatment: Bead blast
Shutter: 0021-25014
Treatment: Bead blast
Pedestal type: HT ECHUCK
Pedestal part number: 0010-27430
Heater spacing: 55 mm
Heater spacing: -51000 Steps
Minimum heater spacing: 32 mm
Minimum heater spacing: -69000 Steps
Maximum heater spacing: 55 mm
Maximum heater spacing: -51000 Steps
CRYO Gate valve: (3) Positions
MFC 1 Gas: N2 Process
MFC 1 Size: 200
MFC 1 Type: N2
MFC 1 Part number: 0015-02992
MFC 2 Gas: None
MFC 3 Gas: Ar process
MFC 3 Size: 150
MFC 3 Type: Ar
MFC 3 Part number: 0015-02992
MFC 4 Gas: ArH
MFC 4 Size: 20
MFC 4 Type: Ar
Chamber base pressure (T): 3-E8
Chamber rate-of-rise: 650 nTorr / Min
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
CDA: 95.7
Slit valve CDA: 85
Cooling water flow: 11.2 GPM
Process type: RT DSTTN
Chamber position: 3,4
Shutter option
Chamber body: SST
Chamber body part number: 0040-98657
Slit valve seal: Bonded
Slit valve door part number: 0040-84391
Target vendor: NIKKO / TOSOH
Target number: TAG 72
Bake out / Idle power: 0.4 %
DC Power supply (AE-MDX): ENI
APPLIED MATERIALS Part number master: 0190-22931
OEM Part number master: DCG200Z
Generator size : 20 kW
Total DC (12 kWh,24kWh): 20 kW
Magnet rotation speed: 95 RPM
Magnet shim thickness: No data
Magnet type: TI / TIN
Magnet part number: 0010-03487
Magnet spacing: 1.1 mm
Adapter part number: 0040-69768
Upper shield part number: 0021-21234
Treatment: Bead blast
Lower shield part number: 0021-22065
Dep ring part number: 0040-07291
Cover ring part number: 0021-22064
Shutter: 0021-26609
Pedestal type: Advanced A101
Pedestal part number: 0010-27432
Heater spacing: 55 mm
Heater spacing: -51000 Steps
Minimum heater spacing: 32 mm
Minimum heater spacing: -69000 Steps
Maximum heater spacing: 55 mm
Maximum heater spacing: -51000 Steps
CRYO Gate valve: (3) Positions
MFC 1 Gas: N2 Process
MFC 1 Size: 200
MFC 1 Type: N2
MFC 1 Part number: 0015-02992
MFC 2 Gas: None
MFC 3 Gas: Ar process
MFC 3 Size: 150
MFC 3 Type: Ar
MFC 3 Part number: 0015-02992
Chamber base pressure: 3-E8 T
Chamber rate-of-rise: 650 nTorr / Min
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
CDA: 95.7
Silt valve CDA: 85
Cooling water flow: 11.2 GPM.
AMAT / APPLIED MATERIALS / AKT Endura II is a dual-chamber oxidation/etch/CVD/ALD reactor equipment used for advanced semiconductor applications and device fabrication. It is designed to provide high throughput and increased productivity. The system features a two-chamber design that enables simultaneous operations in different process chambers, allowing higher throughput and improved uniformity. The chambers feature independent temperature control with a maximum operating temperature of 1020°C. AKT Endura II is capable of high-density plasma (HDP) processing, providing an advantage in the areas of precision etching, sputter deposition, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Its advanced HDP control capabilities enable more precise etching and sputtering for finer line resolutions and finer deposition for nanosized features. In addition, the unit supports a variety of plasma sources, enabling a wide range of materials to be used. AMAT Endura II also includes real-time monitoring for reliable process control and higher yields. The user-friendly graphical user interface (GUI) allows for process automation, enabling rapid switching between different recipe sets as needed. Adjustment of recipes for advanced film structures and deposition processes are possible with the GUI, as well as the ability to view substrate-level parameters such as temperature, pressure, and wafer uniformity. The machine also features an advanced Auto-Correction Module (ACM) that provides a method for optimizing process results with less user intervention. This module allows users to monitor and adjust parameters on the fly, ensuring improved process uniformity and repeatability with minimal downtime. Additionally, smart technology features such as multiple recipe optimization, intelligent wafer handling, and precise process control allow for improved yields and quality. Due to its advanced features and capabilities, APPLIED MATERIALS Endura II is an ideal choice for advanced semiconductor processing, allowing users to achieve high production throughput and improved device quality. The tool provides superior performance, reliability, and flexibility for increased yields and process uniformity.
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