Used AMAT / APPLIED MATERIALS Endura II #9236847 for sale

AKT/AMAT / APPLIED MATERIALS / AKT Endura II is a dual-chamber, high-frequency inductively-coupled plasma (ICP) reactor designed for the etching and deposition of materials used in semiconductor and optoelectronic device fabrication. This reactor is comprised of an RF generator, a gas-flow manifold equipment, an optical window, and a plasma chamber. The reactor is designed to be integrated with additional in-line process tools for various etching and deposition processes. The RF generator is used to power the plasma, and provides for a maximum output of up to 2000 watts. The RF generator includes a high-frequency inductively-coupled plasma system, which is designed to evenly distribute power throughout the plasma chamber for the etching and deposition processes. The generator also includes an automatic frequency control unit, which allows the user to set the frequency of the RF generator in either continuous or sprint modes. AKT Endura II includes a gas-flow manifold machine made up of numerous processesgs to provide a wide range of process parameters. This tool includes mass-flow controllers, a gas-mixing manifold, and a grounded substrate-mouthing plate for sample handling. It also includes a high-altitude capability for up to 100 mbar pressure in the plasma chamber. The optical window for AMAT Endura II is designed to provide quartz-grade transmittance for minimal light-induced heating and contamination of substrates. The window allows for high-resolution imaging of the etching and deposition processes, and is coated to resist abrasion or corrosion from aggressive chemicals used in the etching and deposition processes. Endura II plasma chamber is designed to provide the user with a wide range of process and temperature ranges. The chamber is designed to support plasma-selective etching capabilities, including ion-beam etching, deep reactive ion etching, and pulsed plasma-enhanced atomic layer deposition techniques. It also allows for high-density plasma with hydrogen production for superior etch rates and high-throughput operation with low temperature and pressure ranges. AMAT/APPLIED MATERIALS Endura II is a sophisticated, dual-chamber, high-frequency ICP reactor designed to enable a wide range of etching and deposition processes for semiconductor and optoelectronic device fabrication. The RF generator and gas-flow manifold asset provide for the processing of a wide range of process parameters. The quartz optical window allows for high-resolution imaging of the etching and deposition process, while the plasma chamber allows for high-density plasma and hydrogen production at low temperature and pressure levels. AMAT / APPLIED MATERIALS / AKT Endura II model is designed to provide a high-throughput operation, superior etch rates, and increased yield for process applications.