Used AMAT / APPLIED MATERIALS Endura II #9251715 for sale

AMAT / APPLIED MATERIALS / AKT Endura II is a chemical vapor deposition (CVD) reactor designed for research, development, and commercial production of thin-film coatings. AKT Endura II reactor can be used to deposit thin metal and dielectric films, as well as compound semiconductors and other advanced materials for microelectronic, optoelectronic, and microsystem devices. AMAT Endura II is a thermally robust, large-area, industrial-scale CVD reactor with a modular design. Its chamber has a dimension of 40" x 50" (101.6 cm x 127 cm), cost-effectively delivering larger-scale uniform coatings on substrates from substrates measuring 8" x 8" (20.3 cm x 20.3 cm) up to 30" x 38" (76.2 cm x 96.5 cm). Typical process pressure range is between 1 Torr to 10 Torr, while the temperature is programmable from 25 degrees Celsius to 1000 degrees Celsius. Its unique double helix shower head design ensures high uniformity and process repeatability, with ≤10 nm/degree Celsius temperature and pressure variation, leading to stoichiometry control and higher deposition rates. The technology incorporated in APPLIED MATERIALS Endura II enables high precision substrate heating, uniform gas distribution, efficient gas / chemical usage, and precise process control. It uses chemical source Introduction Module (CSIM) to introduce process gases as pure as 99.999% in a pre-mixed form and flexible gas delivery to ensure complete utilization of chemicals, and reduce process costs. Moreover, its intelligent Automated Control System (ACS) enables real-time monitoring and control of key process parameters, reducing film defectivity. Endura II is designed to maximize safety, providing you with arc detection control, vacuum interlock, and double beam optical pyrometer. Further, its low-vibration cooling pumps prevent the process chamber from heating up during operations, reducing the risk of safety hazards. To conclude, AMAT / APPLIED MATERIALS / AKT Endura II is a reliable, high-performance CVD reactor with advanced process control capabilities for robust production of thin metal and dielectric films, as well as compound semiconductors and other advanced materials.