Used AMAT / APPLIED MATERIALS Endura II #9270653 for sale

AMAT / APPLIED MATERIALS / AKT Endura II is a chemical vapor deposition (CVD) reactor used to form thin layers of various materials on a substrate. The reactor consists of multiple "layers", from the heated chamber, to the support and transfer components, to the computer-controlled electrical equipment. The heated chamber is the heart of AKT Endura II reactor. It is a cylindrical stainless steel container with an inner and an outer chamber. The outer chamber walls are lined with insulation to maintain the temperature, while the inner chamber walls are lined with ceramic susceptors that act as heaters. The susceptors are capable of reaching temperatures up to 1200°C, and can be independently controlled to form different thicknesses of material layers. The chamber also contains one or more specialized gas inlets, allowing for the introduction of chemicals and gases used in the deposition process. The support and transfer mechanisms of AMAT Endura II are designed for efficient and reliable substrate movement into and out of the chamber. The track table, typically located at the opposite end of the chamber, has a roller system for rapidly transferring substrates between the chamber and the track table. The reaction concentration, temperature, pressure, and flow of the process gases are all electronically monitored and regulated. APPLIED MATERIALS Endura II operates on a hybrid direct-current/radio-frequency power unit. This machine allows for greater control of the deposition process, enabling the operator to accurately adjust the temperature, uniformity, and thickness of the layers formed. An internal computer tool monitors and regulates the electrical current and voltage, as well as monitors and records asset variables, including plug temperature, chamber pressure, and deposited layer parameters. Endura II reactor is designed specifically for the production of high-temperature deposition layers. It is capable of producing various layers of materials, including metal-semiconductor, metal-insulator, and silicon-dielectric, each with excellent uniformity and selectivity. The reactor's advanced electrical model allows for precise control of layer formation, enabling the operator to create well-defined material layers in a short amount of time.