Used AMAT / APPLIED MATERIALS Endura II #9315356 for sale
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ID: 9315356
Wafer Size: 12"
PVD System, 12"
Wafer type: Notch
3E
(2) Impulse AIN chambers
Chamber A:
Location / Option
Position 1 / Impulse
Position 4 / Impulse
Position A / Cool down
Position B / Cool down
Position E / Dual mode degas
Position F / Dual mode degas
Line frequency: 50 Hz
No UPS / CVCF
Standard mainframe
Single wafer load locks: HT SWLL without degas module
XP Robot with enhanced high temperature wrists
Operating system: Windows XP
Rack
CTI-CRYOGENICS Cryo Pump
(2) Cryo compressors
Cryo compressor voltage: 400 V - 480 V
MFC Type: GF 125
Impulse: Position (2, 3)
Wafer pedestal E-chuck
Process kit type: TAOX
P/N: 1444245-00
Shutter
RGA Valve manual
Turbo cryo pump with water trap
Heat exchanger hose: 50 ft
Power supply: 10 kW, DC
(2) EDWARDS IH1000 Pump
Rough pump voltage: 208 V
Modular remotes umbilical:
AC Rack to rough pump: 75 ft
Mainframe to rack: 75 ft.
AMAT / APPLIED MATERIALS / AKT Endura II is a batch-type, production-grade, advanced PECVD (Plasma Enhanced Chemical Vapor Deposition) reactor used for a variety of substrate deposition processes. AKT Endura II reactor has a unique design that offers high-performance advanced film deposition with improved uniformity and precision. The equipment is highly modular and customizable and offers a wide range of configurations depending on substrate size and deposition requirements. AMAT Endura II offers a variety of performance-enhancing features including a high-resolution LCD touchscreen interface and smart user interface that allows users to select from a wide range of parameters to tailor the performance of the system. APPLIED MATERIALS Endura II also utilizes two independent RF generators to enable optimized tuning of the plasma in terms of increasing the uniformity of the film, reducing the polygonal shape artifacts, and enhancing the selectivity of the deposition process. In addition, Endura II offers effective in-situ cleaning which improves substrate integrity and extends the life of the deposition chamber. AMAT / APPLIED MATERIALS / AKT Endura II utilises a polysilicon chamber that has a cylindrical profile, which offers increased gas distribution for better uniformity, improving the plasma profile and enables larger substrates to be deposited via higher discharge rates. The unit includes a gas manifold that includes up to four gas inlets enabling multi-gas deposition processes and three optional high energy ion cannons for adhesion promotion. The reactor is equipped with an automated control machine, helping to improve reproducibility and process control. The advanced control algorithms, coupled with the large choice of parameters available on the user interface, allows users to tune the plasma reactants to a desired condition, allowing a greater degree of control during the process. AKT Endura II is a versatile tool that offers a range of advantages to the user. In addition to increased gas dispersal and improved uniformity, the multiple gas inlets and in-situ cleaning options make it an ideal solution for manufacturers looking for a cost-effective and reproducible solution for their deposition processes.
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