Used AMAT / APPLIED MATERIALS ENDURA #9109593 for sale
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ID: 9109593
Wafer Size: 12"
Vintage: 2002
PVD system, 12"
Chamber 1:
For Al-Cu PVD chamber
DCPS;Master, OPTIMA DCG-200, ENI, for PVD
Slave, OPTIMA DCG-200, ENI, for PVD
PUMP/CRYO, SICERA KZ-8L3C, SHI
HT ESC type stage
Ar;200/20sccm
Chamber 2:
Chamber ONLY For PVD
Not used
Chamber 3:
For TiN PVD chamber
DCPS;OPTIMA DCG-200, ENI, for PVD
PUMP/CRYO, SICERA KZ-8L3C, SHI
A101 type stage
Ar/N2;150/200sccm
Chamber D:
For Pre-CLN chamber, PCXT
RFPS;GHW-12A/GMW-25A, ENI, for BIAS/SLA
PUMP/CRYO, SICERA KZ-8L3C, SHI
Ar;200/20sccm
Chamber E,F:
For Degas, Plate heater
PUMP/CRYO, SICERA KZ-8L3C, SHI
Ar, press. Controlled
Missing Parts
Currently de-installed
2002 vintage.
AMAT / APPLIED MATERIALS ENDURA is a single powder processing equipment manufactured by AMAT Inc. This reactor uses chemical vapor deposition (CVD) to deposit layers of silicon films ideal for applications such as alternating field emitter (AFEM), field effect transistors (FETs), and metallization. This allows semiconductor structures to be efficiently built onto a substrate material. Using a multi-level distributed showerhead delivery system, AMAT ENDURA allows for uniform processing with very low levels of particle contamination. This unit consists of three main components: the main chamber, the hot wall, and the cold wall. The main chamber is responsible for dispersing the reactive gases throughout the entire volume of the reactor. The CVD gases are then diffused through a homogenous showerhead, creating a uniform deposition and high process repeatability. The hot wall is responsible for creating the substrate temperature necessary for the vapor-growth of desired films. This is done with the aid of a graphite radiation source and protecting the process gases from thermal breakdown. The cold wall, when used, helps to maintain the desired temperature distribution in order to achieve a high deposition rate. Additionally, APPLIED MATERIALS ENDURA offers complete controller-driven capability, allowing for precision and consistency during the deposition process. This includes the capability to set and maintain the desired reactor pressure, temperature, and growth rate. ENDURA is a versatile and reliable machine that can produce films with uniform surface properties. Its ability to deposit high quality films, with a low degree of process variation, has made it an invaluable tool for applications that require high uniformity and high throughput capacity. Thus, making it an ideal choice for many advanced electronic and MEMS applications, including thin-film transistors, displays, and flat panel devices.
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