Used AMAT / APPLIED MATERIALS ENDURA #9312917 for sale

AMAT / APPLIED MATERIALS ENDURA is a reactor designed for use in semiconductor manufacturing processes. It is a high-temperature, metal-organic chemical vapor deposition (MOCVD) equipment used to grow single-crystal, thin-film materials to create next-generation chips, or integrated circuits. The reactor provides a precise environment for the deposition of epitaxial layers onto a single-crystal growing substrate to produce ultra-thin, high-performance layers. AMAT ENDURA reactor is designed for growth of III/V compound semiconductors, such as gallium arsenide (GaAs), indium phosphide (InP), and their alloys. The system uses an automated turret to monitor gas flow, stage temperature, position substrates and bowls, and determine the deposition rate. Various materials can be delivered via the automated turntable unit, ensuring the deposition rate is consistent and ideal for the growth of III/V compound semiconductor layers. The substrate stage can also be equipped with an in-situ metrology tool to accurately measure key film parameters. APPLIED MATERIALS ENDURA features advanced thermal management, allowing the automation to quickly and accurately ramp up to high temperatures while minimizing thermal stress on the reactor components. These controls enable faster ramp times, higher process capability, and improved process accuracy. Additionally, ENDURA reactor is equipped with an intelligent temperature optimization machine that actively monitors process temperatures for optimal thermal convection. This ensures precise temperature regulation and improves growth uniformity and yields. AMAT / APPLIED MATERIALS ENDURA is designed for quick and easy maintenance, enabling an operator to easily access components for faster tool-up time and maintenance. Additionally, its low-maintenance construction and advanced parts fabrication ensure minimal downtime and improved yields over time. Overall, AMAT ENDURA is a powerful MOCVD reactor designed for the growth of III/V compound semiconductor layers. Its advanced features and precision controls provide a precise environment for creating single-crystal thin-film materials to create advanced chips and integrated circuits.