Used AMAT / APPLIED MATERIALS Oxide chamber for MxP+ #293656757 for sale

AMAT / APPLIED MATERIALS Oxide chamber for MxP+
ID: 293656757
AMAT / APPLIED MATERIALS Oxide chamber for MxP+ is a chemical vapor deposition (CVD) reactor that is used to deposit thin films of silicon dioxide onto semiconductor components. The Oxide Chamber has a temperature controlled quartz tube that is surrounded by a coiled Pt/Ti filament, allowing for precise and uniform temperature control, while an automatically generated plasma forms from a 13.56MHz high frequency power supply. Inside the Oxide Chamber, precursor gases such as silane (SiH4), hydrogen (H2), and oxygen (O2) are introduced and pass through the heated quartz tube. As the gases move further into the tube, they vaporize and then react to form silicon dioxide. The gaseous reactions are partially catalyzed by the plasma. The reaction process breaks the gaseous molecules into radicals which, upon collision, are rapidly transformed into silicon dioxide through the processes of high-temperature oxidation, reduction, and homogenous nucleation. The film growth process in the Oxide Chamber is highly regulated, with adjustable parameters for various process cycles. These include the rate of precursor gas injection, plasma ion density, chamber pressure, and cooling rates. Controlling these parameters allows for different properties in the oxide films, such as density, uniformity, roughness, and other features. The Oxide Chamber has been designed to produce high-quality, low-stress oxide layers, and is used in many industries, including microelectronics, automotive, and aerospace. This type of chamber has proven useful for making components that have superior resistance to corrosion, higher temperature stability, and a lower dielectric constant than other types of deposition processes. AMAT Oxide chamber for MxP+ is a versatile tool used for many applications. With its reliable performance, controllable process parameters, and ability to deposit oxide films consistently, this reactor is an ideal choice for many types of silicon dioxide film deposition needs.
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