Used AMAT / APPLIED MATERIALS P5000 Mark II #293620069 for sale

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ID: 293620069
Wafer Size: 6"-8"
PECVD System, 6"-8" Dual chamber Auto loader for multi-substrate Chiller Pumps (2) Temperature chambers Spare parts Monitor Robot: 3-Phase Remote cables AMAT-0 Heat exchanger Standard AMAT / APPLIED MATERIALS slit valves with Viton O-rings (3) QDP Pumps: (2) QDP80/250 Process chamber pumps QDP40 Load lock pumps Manuals for pumps: Startup Chamber parts Temperature range: Up to 900°C Gases: C2H2, Ar, NH3, H2, N2 DxZ Chambers A and B: DxZ Ceramic heater DC 5 kW 1660 MFCs 100 Torr and 10 torr manometers Pressure control valve.
AMAT (APPLIED MATERIALS) AMAT / APPLIED MATERIALS P5000 Mark II is a plasma enhanced chemical vapor deposition (PECVD) tool used for thin film deposition. The Mark II is a capacitively coupled reactor with two independent RF sources, a stage cooling equipment, two load locks and two independent vacuum chambers. The two chambers can be used in series or in parallel, allowing for a wide range of reactive gases to be processed with different recipes. The load locks contain quartz pin-type sample holders, which enable rapid loading and unloading of wafers without breaking vacuum. The main chamber of AMAT P5000 Mark II exists inside the TITAN™ reactor cavity. This cavity is made of stainless steel and filled with an inductively coupled plasma (ICP) process source, which enables control over the plasma source parameters. The ICP source has three programmable frequencies between 13.56MHz and 27.12MHz, allowing for precise control over the plasma discharge characteristics. APPLIED MATERIALS P 5000 MARK II also features a Cooling System for the lower chamber, which enables temperature control for sensitive processes. The Mark II provides processing capability for low- (2-5mTorr) to high-vacuum (10-6-10-7 Torr) processes. It offers pinch-off valves for each chamber and can be equipped with a gas transporter for gas preconditioning and repeatable gas composition rates. The unit also supports a wide range of gases, including O2, H2, Ar, He, N2, NF3, CF4 and SiH4. The gas transporter provides an inlet filter and, when certain components are selected, an outlet filter to ensure purity of the reactant gases. The machine has a variety of process control parameters. This includes pressure, temperature, and chamber bias, as well as two independent RF power supplies and an optional matching network. Its parameter control offers DC bias and sweeping capabilities, allowing users to fine-tune their deposition parameters. P5000 Mark II also has a communications interface, enabling data logging and other control parameters to be accessed and modified for process optimization. The Mark II also features a uniquely shaped visualization window, allowing direct image viewing of the deposition and etch processes. This allows for a greater understanding of the processes being performed on the samples. In addition, the Mark II includes EOL protection, device matching, oxygen free plasma and a substrate cooling technique able to maintain on-wafer temperatures. Overall, P 5000 MARK II provides an efficient, reliable, and cost-effective PECVD solution for a wide range of deposition and etch processes. Its multiple process chambers and supporting accessories, along with its extensive range of process control parameters, make APPLIED MATERIALS P5000 Mark II an ideal solution for both research and industrial applications.
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