Used AMAT / APPLIED MATERIALS P5000 Mark II #9298983 for sale

AMAT / APPLIED MATERIALS P5000 Mark II
ID: 9298983
Wafer Size: 6"
CVD System, 6".
AMAT / APPLIED MATERIALS P5000 Mark II is an advanced etch process reactor which provides improved plasma accuracy and control, enabling improved device yields and performance while reducing the cost of ownership. This etch process reactor is suited for argon and fluorine-based processing. It is capable of etching a wide variety of materials, such as silicon, polysilicon, and others. AMAT P5000 Mark II is a recipe-driven, production-capable tool, with four I/O operating centers and a single etch chamber. It also features a multi-channel, low-voltage Monoblock™ magnetron which ensures controlled power levels for both reactive gas species ions and gas neutralization. The Monoblock magnetron provides enhanced control and accuracy of the plasma profiles to maximize wafer process uniformity from the edge to the center. It is also equipped with a RF impedance system which ensures fast adaptive responding to fluctuations in the reactant gases. APPLIED MATERIALS P 5000 MARK II is designed to maximize productivity with process stability, throughput and productivity, as well as enabling optimal etch depth and profile control. The process performance is further enhanced by including an advanced source tuning module to enable RF source matching and process optimization. The included gas delivery system allows for a wide range of reactant gases and offers balanced gas flow rates, low reactant gas leakage, and minimize deposition of contamination on the wafer. Additionally, the process chamber comes with an advanced film deposition monitoring system which provides in-situ wafer mapping of the deposition on the wafer. By monitoring the deposition layer, an operator can quickly detect any slight shifts in the etch process parameters, allowing for an immediate adjustment and correction. Overall, the Applies Materials P5000 Mark II etch process reactor is a highly capable etch tool which provides improved plasma control, uniformity, and process optimization to maximize device yields and performance. With its advanced control systems and multi-channel RF source, it offers users an effective and reliable means of processing a wide range of materials.
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