Used AMAT / APPLIED MATERIALS P5000 #130202 for sale

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ID: 130202
Wafer Size: 8"
Vintage: 1994
Etch poly system, 8" (3) MxP poly chambers 1994 vintage.
AMAT / APPLIED MATERIALS P5000 is a reactor designed to grow large area gallium nitride (GaN) films. This reactor enables the fabrication of high-efficiency optics and electronics components. AMAT P-5000 utilizes a chemical vapor deposition (CVD) process to deposit GaN films on substrates such as silicon, sapphire, and GaAs. The reactor is designed with a high-temperature quartz tube furnace and contains a quartz reaction chamber. The crucible in the reaction chamber is heated to temperatures between 800°C and 1000°C by the furnace, while a source gas containing either GaN or SiGaN is introduced into the reaction chamber. Metallorganic chemical precursor vapor is also supplied. Within this reaction chamber, the precursors decompose to form a gaseous suspension of nitrogen and gallium that is directed to the substrate to form a homogeneous film with a flat and uniform thickness. APPLIED MATERIALS P 5000 reactor is equipped with a wide variety of control options and features. To monitor the process within the reaction chamber, the reactor is equipped with two independent temperature control systems for the substrate and reaction chamber. This allows for temperature control and adjustable heater power, as well as accurate gas flow, pressure and temperature control. The reactor is also capable of incorporating an array of GaN crystal-growing processes inside the reaction chamber, such as MOVPE (metal organic vapor phase epitaxy), HVPE (hydride vapor phase epitaxy), and S-PDP (seeded-HVPE). To enable efficient and controlled crystal growth, APPLIED MATERIALS P-5000's features enable control of the total pressure inside the reaction chamber, allowing dynamic adjustment of temperatures, as well as the incorporation of gas conditioning and temperature stages. The reactor also provides a distinct set of multi-zone temperature controllers, allowing for accurate control of the deposition process across crystal surfaces and substrates. In addition, P 5000 is equipped with a wide range of safety features that protect personnel, such as a dielectric charge eliminator to protect operators from electrical shocks and an interlocked door system to prevent unauthorized access. Overall, AMAT / APPLIED MATERIALS P 5000 reactor is a reliable and robust CVD deposition tool for the fabrication of large area GaN films with optimized and uniform performance.
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