Used AMAT / APPLIED MATERIALS P5000 #293690469 for sale

AMAT / APPLIED MATERIALS P5000 reactor is an advanced, high-throughput vertical transistor device fabrication equipment. It is used for ultra high-performance device processing, offering unmatched device performance, yield, and reliability. The device is capable of processing wafers from one to six inches in diameter. It uses an inductively-heated hot wall quartz pedestal for substrate heating, and is capable of 200W of absorbed power for up to 500°C for up to 15min. The maximum temperature can be set up to 1250°C. The system comes with an automatic plasma cleaning feature and a computer-controlled process control unit. AMAT pedastal to substrate alignment is capable of both batch and single wafer processing. It also offers fast wafer transfer between process and transfer modules. It also provides a highly flexible and accurate wafer handling machine. AMAT P-5000 reactor is equipped with an advanced electron cyclotron resonance (ECR) microwave source for oxygen and silicon plasma-enhanced chemical vapor deposition (PECVD). This process enables high densities and high-quality deposition. The PECVD reactor is capable of processing temperatures up to 900°C and can achieve a deposition rate of up to 6 microns per minute. APPLIED MATERIALS P 5000 tool also has a temperature and oxygen feedback control feature, which provides the highest level of control over the process parameters. It also offers adjustable process pressure and plasma energy to provide a high degree of uniformity in the substrate deposition process. The asset also offers a transparent quartz wafer transfer window. This feature enables monitoring of both the chamber and the wafers with optical microscopy, ultraviolet (UV) reflection, or infrared (IR) radiation. Overall, P-5000 reactor is an advanced, high-throughput vertical transistor device fabrication model which is capable of providing ultra high-performance device processing, yield, and reliability. It offers a wide range of features and capabilities that make it ideal for fabricating high-performance, low-cost transistor devices.