Used AMAT / APPLIED MATERIALS P5000 #9270691 for sale

ID: 9270691
WCVD System.
AMAT / APPLIED MATERIALS P5000 is an advanced plasma etch reactor designed for production of high-performance nanodevices such as transistors, integrated circuits, and optoelectronic components. This reactor provides an optimized etch rate, uniformity, and selectivity while maintaining an overall low cost of ownership. AMAT P-5000 is a single-wafer-mode chamber with a 40-cm electrode spacing. The etch chamber has a rotating inert cathode for uniform etching and two parallel sources, which are operated separately for different processes. APPLIED MATERIALS P 5000 also has a built-in cleaning mechanism, which helps to minimize particle buildup and reduces deposits on the wafer surface. APPLIED MATERIALS P-5000 utilizes advanced power conversion, plasma excitation, and signal processing technology to achieve high etch uniformity and control, allowing faster processing times and improved device performance. It also incorporates a computer-controlled automated control equipment, allowing for precise control of etch parameters. AMAT P5000 also has an integrated high vacuum system to minimize any detrimental effects of etching process conditions. P-5000 is designed to improve device performance through low leakage and stress. The reactor uses advanced oxide etch-back processes to reduce the effective oxide thickness and minimize leakage. The unit also uses patented RF matching circuitry to reduce etch-induced stress and improve device performance. P5000 also allows for thermal and stress-control processing of thin film transistors (TFTs). This process involves the application of an external heat source to thermally activate the thin film for improved device performance. In addition, P 5000 can be used for chemical vapor deposition (CVD) of dopants, enabling the fabrication of advanced devices. Overall, AMAT P 5000 is an advanced plasma etch reactor that provides excellent device performance and productivity. The machine allows for precise tuning of etch parameters, automated control, and thermal and stress-control processing to enable the fabrication of advanced devices.
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