Used AMAT / APPLIED MATERIALS Preclean II chamber #293767247 for sale
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ID: 293767247
Preclean Pedestal (P/N: 0010-13927)
COMDEL CPS-1001S RF Generator with frequency: 13.56 MHz (P/N: 0190-70099)
LF10A (P/N: 3150010-001)
Missing parts:
Ion gauge (P/N: 4007206-0001)
Baratron Transducer with pressure: 0.1 Torr (P/N: 627A.1TBD)
Turbo pump (P/N: 4112334-0001-REF)
RF Match (P/N: 0010-20524)
COMDEL CDX-2000 RF Generator (P/N: 0010-13927)
Leak check port.
AMAT / APPLIED MATERIALS Preclean II chamber is a critical component of the plasma-enhanced chemical vapor deposition (PECVD) process used in the fabrication of semiconductor devices. This reactor is designed to effectively pre-clean the silicon wafer before the deposition of films, ensuring the removal of any surface contaminants and promoting optimal film adhesion and uniformity. AMAT Preclean II chamber operates based on a dual-frequency RF plasma power source, typically at frequencies of 500 kHz and 13.56 MHz. These power sources generate a low-pressure plasma environment within the chamber, facilitating the removal of native oxides, organic contaminants, and other unwanted materials from the wafer surface through a combination of physical and chemical mechanisms. The chamber itself is constructed from high-purity materials such as quartz and stainless steel to maintain cleanliness and prevent contamination of the wafers during processing. The wafer is loaded into the chamber using a robotic handling system, which ensures precise positioning and minimizes the risk of damage or particle contamination. Once the wafer is loaded into the chamber, a gas mixture consisting of a reactive gas and a carrier gas is introduced. Common reactive gases used in APPLIED MATERIALS Preclean II chamber include hydrogen (H2), ammonia (NH3), and nitrogen trifluoride (NF3), which can react with and remove various contaminants from the wafer surface. The carrier gas, typically argon (Ar) or helium (He), helps transport the reactive species to the wafer surface and enhances the cleaning efficiency. The plasma is ignited by applying RF power to the electrodes located within the chamber, creating a highly reactive environment that breaks down the molecular bonds of the contaminants on the wafer surface. The reactive species generated in the plasma chemically react with the contaminants, forming volatile byproducts that are pumped out of the chamber, leaving the wafer clean and ready for subsequent processing steps. One of the key advantages of Preclean II chamber is its ability to achieve high cleaning efficiency while maintaining a low thermal budget. This is crucial in semiconductor manufacturing processes, where precise control of the wafer temperature is essential to prevent thermal damage to the delicate structures on the wafer surface. Moreover, the chamber is equipped with advanced process control features, such as real-time monitoring of process parameters, automated gas flow control, and endpoint detection capabilities, to ensure consistent and reproducible cleaning results across multiple wafers. In conclusion, AMAT / APPLIED MATERIALS Preclean II chamber plays a vital role in the semiconductor manufacturing process by providing a reliable and efficient means of pre-cleaning silicon wafers before the deposition of thin films. Its advanced design, high cleaning efficiency, and precise process control make it an indispensable tool for achieving high-quality semiconductor devices with superior performance and reliability.
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