Used AMAT / APPLIED MATERIALS Producer CVD #9006107 for sale
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ID: 9006107
Vintage: 1999
System, 8"
(3) Twin XA Chambers, SACVD - BPSG
SNNF wafers
Standard Producer Frame CVD
TEOS/TEB/TEPO
STEC 4440 MFC's
Through the wall placement
Nanometrics 7000 Integrated Metrology
ATMI Chemical Refill System
Remote Clean - ASTeX
Advanced Energy: RFG 2000-2V CE - RF Generators
Original Controller with External PC
Enhanced Legacy Software: B2135
Neslab Steelhead 0
(2) Standalone Monitors: 1 / 15 ft. cable, 1/ 30 ft. cable
Heat Exchange/Chiller cable length: 50 ft.
Pump Cable length: 50ft.
200/208V, 60Hz
CE Marked
2000 vintage.
AMAT / APPLIED MATERIALS Producer CVD (Plasma Enhanced Chemical Vapor Deposition) is a Reactor used in manufacturing thin films of various materials. This reactor is commonly used in the production of semiconductor devices, integrated circuits and displays. It enables the deposition of a variety of thin films such as polysilicon, amorphous silicon, oxides, nitrides, and metals. AMAT Producer CVD operates using two different plasma sources, radio frequency (RF) and direct current (DC). In the RF source, RF electric fields are used to excite the gas molecules to create a plasma. In the DC source, DC electric fields are used to energize the electron particles in the fuel gases to create a hot electron plasma. This plasma creates chemical reactions in the gas phase which can then deposit desired materials to the substrate in the chamber. APPLIED MATERIALS Producer CVD consists of various components including a chamber, a source of reactants, gas delivery equipment, process control unit, and a vacuum system. The chamber is a cylindrical space with a lip electrode at the top of the chamber and a substrate holder at the chamber's bottom. The reactant source is composed of sacrificial rods, evaporated/sputtering sources or an array of showerhead electrodes, which could commonly be used to etch the substrate's surface. The gas delivery unit provides inlet gases from the source to the chamber which will then be excited into a plasma by the two plasma sources in the chamber. Depending on the recipe to be processed, the number of gases will range from one to ten. The process control unit offers advanced control and monitoring to ensure process recurrence. The vacuum machine provides the vacuum pressure necessary to create the plasma. In summary, Producer CVD reactor uses RF or DC plasma sources in combination with various reactants to deposit thin films on a substrate. It consists of a chamber, a reactant source, gas delivery tool, process control unit, and vacuum asset. This reactor is commonly employed in the production of semiconductor devices and integrated circuits.
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