Used AMAT / APPLIED MATERIALS Producer III #9223648 for sale
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ID: 9223648
Wafer Size: 8"
Vintage: 2004
Shrink system, 8"
Process: SILCU
CIM
(3) Twin chambers
Hardware configuration:
SMIF: (4) ASSYST Indexers
Handler system:
SMIF Front end robot
VHP Buffer robot
(3) Process chambers
Heat exchanger: Steelhead
High RF generator: (4) RFG 2000-2V
DPA RF Generator: ENI DPG-10
Platform type: Producer shrink
Chamber A & B & C:
Chamber body effective volume (Syscon):
Chamber A: 12980
Chamber B: 13275
Chamber C: 13300
SiH4_H: 1 SLM
SiH4-L: 300 Sccm
NH3 HI: 1 SLM
N2O HI: 3 SLM
N2O LO: 500 Sccm
N2: 10 SLM
NH3: 500 Sccm
Ar: 5 SLM
He: 10 SLM
Number of gas lines / Name: 10
RF1 & RF2 Generator (Max Power / Brand): 2000 W
Foreline pump (EBARA AAS 100WN): 10000 L/Min
Baratron off-set 626 MKS: 10 T
Lift pin type: Free drop
Lift pin speed (Timing of movement): 3580
Load lock: A & B
Configuration:
Pump capacity (EDWARDS BOC): IPX 100A
Difuser: ENTEGRIS 60 PSIG
Venting N2 flow rate: 10 SLM
Venting time: 57 Sec
Pump time: 65 Sec
Baratron Range / Brand / Off-Set: 325 Moducell MKS
Pressure set point for LL pumping switching: 45 Sec
Time delay for LL door open: 10 Sec
Transfer chamber:
Type of robot / Robot blade: Super blade
Robot speed with wafer / Runrate / Slope:
300000 / 210000
230000 / 120000
Robot speed without wafer (Ext/Rot):
200000 / 325000
230000 / 325000
MFC N2 Flow setting: 10 SLM
Chamber base pressure ( Actual / Alarm): 208 mTorr
Wafer transfer - chamber: 300 mTorr
Buffer pressure transfer chamber - wafer: 320 mTorr
Other periphere:
SiH4 HI: 29.6, 30, 36
NH3 HI 27.6, 27.8, 29
CDA Pressure: 85
HX Temperature / Flow rate: 75
N2 (P): 27
SiH4 LO
NH3 LO
N2O: 30
NF3
2004 vintage.
AMAT / APPLIED MATERIALS Producer III is an advanced plasma reactor for the manufacture of semiconductor chips. AMAT Producer III utilizes an electron cyclotron resonance (ECR) source to create a uniform, high-density plasma, which is critical for depositing thin, precise layers of materials such as polysilicon gate dielectrics and copper interconnects in chip production. APPLIED MATERIALS Producer III design allows for optimal process control over existing systems. Its patented wafer-confined volumes and low-noise technology maintain extremely uniform deposition from each area of the wafer. Producer III is also extremely energy efficient, with reduced power consumption and minimal collateral heat development. All of this combined enables AMAT / APPLIED MATERIALS Producer III to improve the chip production practices of semiconductor manufacturers. AMAT Producer III builds upon the previous AMAT Producers I and II by adding several key features. It provides two separate RF power sources that can independently control deposition from the bottom and top of the wafer, allowing the growth of over 200 layers. It is also equipped with a proprietary UHP (Ultra High Pressure) system that maintains an ultra-uniform gas flow across the wafer and more precisely regulates process conditions. APPLIED MATERIALS Producer III also allows for a high degree of flexibility of the deposition. It can apply a uniform film to the entire wafer or to select zones depending on the application. Each zone has programmable parameters that can be adjusted for individual deposition processes, allowing the user to custom design processes. It also has advanced diagnostics and data logging that enable offline analysis of the process. Producer III is a highly advanced plasma reactor designed to provide the most precise and repeatable deposition results. With improved process control, flexibility and energy efficiency, AMAT / APPLIED MATERIALS Producer III offers unparalleled support for chip manufacturing processes.
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