Used AMAT / APPLIED MATERIALS Producer III #9238404 for sale

AMAT / APPLIED MATERIALS Producer III is a reactor designed for purposes of etching and depositing materials via chemical vapor deposition (CVD) for the production of III-V and quartz semiconductor wafers. It is a large-scale machine with the working chamber measuring at 25.6 cm (10 inches) in length. The reactor contains two main chambers: the source and the plasma, which deposit layers of material in the desired thicknesses. The source chamber is equipped with up to four chemical precursors and contains a bubbler, a heating element, a distributor, a showerhead, and an RF generator. The plasma chamber contains high-frequency plasmas which are generated through a coaxial antenna placed in the top of the chamber. The output gas is then filtered and pumped through the showerhead as a uniform, steady vapor. The particles then collide with the surface of the wafer, depositing the desired materials. AMAT Producer III uses multidimensional process mapping to achieve precise control of the etch rate of the wafer or layer thickness. It has a control system to enable repeatable etch processes and can be accurately modified to meet specific customer requirements. The reactor has been designed for both batch and single wafer process capability. The chamber airlocks allow for easy loading and unloading of the wafers, resulting in improved productivity. In addition, APPLIED MATERIALS Producer III has been equipped with a comprehensive range of protection systems to ensure safe operation. These include flammable gas detection, low-temperature monitoring and emergency shutdown systems. In conclusion, Producer III is an efficient and reliable reactor used for etching and materials deposition. It utilizes multidimensional process mapping to ensure precise control of etch rate and layer thickness. It has been designed for both batch and single wafer process capabilities with a comprehensive range of safety features. This reactor system delivers consistent, high-quality results for the production of III-V and quartz semiconductor layers.