Used AMAT / APPLIED MATERIALS PVD Chamber for Endura #9275281 for sale
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ID: 9275281
Wafer Size: 12"
12"
Process: IMP TiN
Magnet
Matcher
Heater: 0010-27983
Cryo pump OB-IF8
Gate valve: VAT
Angle vacuum valve: AVT-150M-P-03
Adaptor: 0010-43626
Manometer: 1350-00255
ATM gauge: W117V-3H-F12M-X30014
Capacitance pirani gauge: 3310-00073
Pedestal integration box: 0010-28071
Shutter sensor assembly: 0190-10801
Source assembly: 0010-37254
ISAC CP 10 Block board: AS0084-03
Angle vacuum valve: AVT-150M-P-03
Defective power supply: 0190-34624
Heater lift motor
Shutter motor: PK564AW2-A8
Drivers:
Heater driver: 3096-1007
Wafer lift driver: 0190-15328
Pedestal driver: PV2A015SMT1PA0-C1
Magnet rotation driver: BXD400B-S
5-Phase driver: A346-043-A4
MFC:
AR 150
AR 200
No wafer lift motor
No hot ion / Pirani gauge.
AMAT / APPLIED MATERIALS PVD Chamber for Endura enables precision thin film deposition for semiconductor device fabrication and other advanced technology applications. This reactor chamber is designed to meet the most challenging requirements for wafer-level and die-level processes that require high-rate, high yield, and high-performance thin film deposition. The chamber is designed to facilitate rapid and efficient PVD processes, with a wide range of options available to suit the needs of any production environment. The Endura chamber features automated wafer transfer and handling with an environmental seal on both the top and bottom of the chamber. This is designed to minimize atmospheric gases entering the process. Specialized clamping systems are supplied, which make it possible to quickly switch from one wafer size to another without the need for any physical adjustments or reconfigurations. The Endura reacter chamber also has a unique two-blade shutter, allowing for rapid ingress and egress of the wafers during processing. This minimizes contamination of the process environment. The first of these shutters is a protective gate that moves into place at the start of each wafer cycle, blocking the formation of particulate matter outside of the process chamber. The second blade is positioned closer to the gas inlet and is used to regulate substrate-to-substrate spacing for even and accurate deposition. The chamber can be equipped with a range of process-specific gas inlets, allowing for precise gas delivery and control to create uniform compositions throughout the process. The heating element is designed for rapid ramp up/down rates, with the ability to accurately control both the substrate and crucible temperatures. This provides flexibility to tune process temperatures, doping profiles, and composition over a wide range of parameters. AMAT PVD Chamber for Endura is an ideal solution for processes requiring precision thin film deposition. The chamber offers reliable and repeatable control of process variables, rigorous environmental control, and rapid (8 sec./wafer) processing speeds. It is an ideal choice for production of advanced semiconductor devices and other applications requiring high throughput and repeatable performance results.
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