Used AMAT / APPLIED MATERIALS Ultima X #293604378 for sale
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ID: 293604378
Wafer Size: 12"
Vintage: 2007
System, 12"
Front interface
Light curtain
Type: 5.3 FI
YASKAWA LM Track robot with edge grip
Wafer pass and storage: 2 Slot
Wafer alignment system
Centura AP Mainframe
Transfer chamber LID: Clear
LCF
Chamber A:
Gas ring: 30-Port
NORCAL Gate valve
SHIMADZU TMP-H3603 LMC-A1 Turbo pump
MKS AX7670-16
IR Diagnostic (EPD)
Standard upper chamber
Chamber B:
Gas ring: 30-Port
NORCAL Gate valve
EDWARDS STP-XH3203P Turbo pump
MKS AX7670-16
Standard upper chamber
TTV (Old type)
Chamber D:
Gas ring: 30-Port
NORCAL Gate valve
EDWARDS STP-XH3203P Turbo pump
Standard upper chamber
Chamber A, B, D:
Top / Side / Bias
SPECTRUM 11002 / SPECTRUM 11002 / SPECTRUM B-10513
Gas panel exhaust: Bottom
MFC Type: 8165C Multiflo
VERIFLO Valves
MILLIPORE Filters
NTU Power rack
Missing parts:
FI Robot paddle
RPC
Turbo throttle valve assembly
Channel boards
ESC
Power supply: 208 V, 320 A, 240 A
2007 vintage.
AMAT / APPLIED MATERIALS Ultima X is a PECVD (Plasma Enhanced Chemical Vapor Deposition) reactor designed to deposit thin films of dielectric and metal on substrates during the semiconductor fabrication process. It is a batch process equipment that enhances production throughput and yields by minimizing substrate handling. AMAT Ultima X utilizes a variety of process gases, liquids and solid precursors to deposit a full range of thin-film materials. Its uniform deposition rate and precise temperature control are critical for manufacturing high-quality integrated circuits. The system has two components: the reactor chamber and the plasma source chamber. APPLIED MATERIALS Ultima X reactor chamber is cylindrical in shape and made of aluminum alloy. It contains a susceptor, a heated chuck mounted on a turntable, onto which substrates can be loaded and measured accurately while keeping the temperature of the unit constant. The plasma source chamber is located above the chamber and operates at a vacuum pressure of 10-4 torr. It provides RF energy, which is used to generate a highly reactive environment, allowing for efficient nucleation of gas molecules on the susceptor, resulting in thin-film deposition. Ultima X can also be used in conjunction with P-CVD (Plasma Assisted Chemical Vapor Deposition) and RTP (Rapid Thermal Processing) processes to create film structures with a thickness range of 1-5µm. It is also capable of performing annealing and diffusion processes. In addition to its functionality, AMAT / APPLIED MATERIALS Ultima X provides exceptional temperature, vacuum and plasma uniformity. It is a powerful, versatile and economical machine built to deliver high-performance thin-film deposition. It is ideal for use in a variety of semiconductor applications and is gaining in popularity as a cost-effective alternative to traditional CVD systems.
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